Allicdata Part #: | 497-12615-5-ND |
Manufacturer Part#: |
STP5NK65ZFP |
Price: | $ 1.34 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | STMicroelectronics |
Short Description: | MOSFET N-CH 650V 4.5A TO-220FP |
More Detail: | N-Channel 650V 4.5A (Tc) 25W (Tc) Through Hole TO-... |
DataSheet: | STP5NK65ZFP Datasheet/PDF |
Quantity: | 95 |
1 +: | $ 1.21590 |
10 +: | $ 1.07793 |
Vgs(th) (Max) @ Id: | 4.5V @ 50µA |
Package / Case: | TO-220-3 Full Pack |
Supplier Device Package: | TO-220FP |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 25W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 680pF @ 25V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 35nC @ 10V |
Series: | SuperMESH™ |
Rds On (Max) @ Id, Vgs: | 1.8 Ohm @ 2.1A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 4.5A (Tc) |
Drain to Source Voltage (Vdss): | 650V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
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STP5NK65ZFP is a type of N–channel Enhancement Mode MOSFET which stands for Metal–Oxide–Semiconductor Field–Effect Transistor. It is designed to provide exceptional switching performance with a fast switching capability of 7 nanoseconds and a low on resistance of 5 milliohms. The STP5NK65ZFP is, due to its current capability of up to 8 amps, suitable for high frequency switching applications. This makes the device suitable for power applications such as power supplies, DC-DC converters, motor controllers, and automotive applications.
MOSFETS are constructed using both source and drain electrodes which are attached to a gate electrode. The gate electrode allows the electrons to travel from the source to the drain, with current flow controlled by the gate voltage. The voltage at the gate therefore controls whether the device is on or off. When the gate is high, the device is on. When the gate is low, the device is off. An advantage of MOSFETs is that they are compact, meaning they can fit into small physical spaces.
The STP5NK65ZFP is a N–channel enhancement mode MOSFET. This type of device will pass current when a voltage is applied to the gate. The threshold voltage that is required depends on the chip manufacturer, but typically it will be between 3 and 5 volts. As the name implies, these devices operate in the enhancement mode, which means that no voltage needs to be applied to the gate until a certain voltage level is met. This makes them ideal for applications such as computer power supplies where a reliable and consistent operation is desired.
Another advantage of this device is its low on resistance. The on resistance of the STP5NK65ZFP is 5 milliohms, which is very low compared to other MOSFETs. This means that less power is wasted in the form of heat when the device is turned on and provides a much more efficient operation. Furthermore, it also has a low gate threshold voltage, so it can be turned on and off relatively easily.
The STP5NK65ZFP is suitable for high frequency switching applications and is capable of a fast switching speed of 7 nanoseconds. This means that the device can switch rapidly, allowing it to be used in a wide range of power applications such as power supplies, DC-DC converters, motor controllers, and automotive applications. Furthermore, due to its current capabilities of up to 8 amps, the STP5NK65ZFP is also suitable for applications that demand high current output.
In conclusion, the STP5NK65ZFP is a type of N–channel enhancement mode MOSFET which is suitable for high frequency switching applications and power applications. It has a low on resistance of 5 milliohms and can switch rapidly at up to 7 nanoseconds. Furthermore, it has a low gate threshold voltage and can sustain up to 8 amps of current output. This combination makes the STP5NK65ZFP an excellent choice for a wide range of applications.
The specific data is subject to PDF, and the above content is for reference
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