Allicdata Part #: | 497-4383-5-ND |
Manufacturer Part#: |
STP5NK90Z |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | STMicroelectronics |
Short Description: | MOSFET N-CH 900V 4.5A TO-220 |
More Detail: | N-Channel 900V 4.5A (Tc) 125W (Tc) Through Hole TO... |
DataSheet: | STP5NK90Z Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 4.5V @ 100µA |
Package / Case: | TO-220-3 |
Supplier Device Package: | TO-220AB |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 125W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1160pF @ 25V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 41.5nC @ 10V |
Series: | SuperMESH™ |
Rds On (Max) @ Id, Vgs: | 2.5 Ohm @ 2.25A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 4.5A (Tc) |
Drain to Source Voltage (Vdss): | 900V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
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The STP5NK90Z is a N-channel, enhancement mode, fast-switching MOSFET (metal oxide semiconductor field-effect transistor). It is part of STMicroelectronics\' PowerMESH™ series, designed to support high-voltage and high-current applications including lighting, telecom, motor control, and bootstrap applications. Short-circuit rated, the STP5NK90Z offers exceptional efficiency, fast switching and low on-resistance thermal characteristics. This makes it well suited to power supply applications at higher voltages and current levels than are typically found with standard MOSFETs.
The STP5NK90Z is an N-channel MOSFET specifically designed to allow high current levels to be switched from one source to another. The device consists of two terminals, the source and the drain. The source is the input or supply terminal, and the drain is the output terminal. The transistor is activated when the gate is provided with a positive voltage, which causes the current to flow from the source to the drain. The STP5NK90Z, like other power MOSFETs, has an on-state resistance (RDS ON ) which is a measure of the resistance of the transistor when it is turned on.
The STP5NK90Z is well suited to applications that require fast switching and a low on-state resistance. It can be used in power circuits in motor control, telecom and lighting applications. It is capable of operating at high voltages and current levels, allowing it to be used in bootstrap applications to provide the necessary voltage to turn on other transistors. The device is also highly efficient, making it a viable option for power management applications.
The STP5NK90Z can be applied in circuits such as H-bridges or synchronous rectifier configurations. In H-bridge configurations, two STP5NK90Z MOSFETs are used to switch the current in a circuit between two directions, allowing for dynamic control of the circuit. Synchronous rectifier circuits consist of two STP5NK90Z MOSFETs in series to provide a controlled switch for high-current applications. These circuits rely on the fast switching and low on-state resistance of the MOSFETs to efficiently provide the required electrical current.
In conclusion, the STP5NK90Z is a N-channel, enhancement mode power MOSFET designed to allow high-current switching within circuits. It is capable of faster switching and low on-state resistance, allowing it to be used in high-voltage, high-current applications such as bootstrap applications, motor control, and telecom. These features also make it suitable for power management applications. The STP5NK90Z can be used in H-bridge and synchronous rectifier circuits as well, where its fast switching and low resistance capabilities are of great advantage.
The specific data is subject to PDF, and the above content is for reference
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