STP5NK60ZFP

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The STP5NK60ZFP is a N-channel MOSFET transistor with an impressive number of characteristics that make it suitable for its application field of pulse-width modulation (PWM) and low-side switching. This article will cover the STP5NK60ZFP’s application field and its working principle.

Application Field

The STP5NK60ZFP is a power transistor with a voltage rating of 600V. It is a great choice for DC/DC converters, application of motor drivers, audio amplifiers, and high speed switching circuits. It is especially suitable for low-side switching, pulse-width modulation (PWM) applications in PC power supplies, LED lighting, and AC motor control circuits.

The STP5NK60ZFP offers a drain current of 5A and a drain-source breakdown voltage (BV _DSS) of 600V, which makes it well-suited for high efficiency and high power denisty DC-DC conversions from 6V to 24V. The low input capacitance and fast switching times ensures maximum efficiency and minimum switching losses in any PWM implementation.

This power transistor provides low gate charge, low on-resistance, and a smaller size than its predecessors. The combination of these features allows for higher power density, which makes the STP5NK60ZFP ideal for applications that require high current switching in low profile, surface mount configurations.

Working Principle

The STP5NK60ZFP is a power MOSFET transistor and it utilizes an insulated gate to control the conduction between its drain and source terminals. The transistor only draws current from its control pin when the threshold voltage is exceeded. When the gate voltage is less than the threshold voltage, the transistor does not conduct any current regardless of the applied gate-source voltage.

The STP5NK60ZFP consists of an N-type and P-type semiconductor layer, separated by an oxide layer. The N-type layer and P-type layer form a “pn junction”. When the pn junction is forward biased, holes and electrons are injected into the oxide layer. The injected electrons combine with the holes, producing a charge that results in a depletion of free carriers in the channel.

If a positive voltage is applied to the gate, excess electrons are injected in the channel, resulting in a current conducting channel between the source and drain terminals. Conversely, applying a negative voltage to the gate results in a non-conducting channel. By controlling the gate voltage of the transistor, the STP5NK60ZFP is able to control the current flow in the channel, allowing for the desired application.

In summary, the STP5NK60ZFP is an ideal choice for applications that require high current switching, such as DC/DC converters and power supplies. The STP5NK60ZFP offers low on-resistance, low gate charge, and a small size, making it suitable for low profile, surface mount configurations. Its fast switching times and low input capacitance ensure maximum efficiency and minimal switching losses in PWM implementations.

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