STP55NF06L Allicdata Electronics
Allicdata Part #:

497-6742-5-ND

Manufacturer Part#:

STP55NF06L

Price: $ 1.25
Product Category:

Discrete Semiconductor Products

Manufacturer: STMicroelectronics
Short Description: MOSFET N-CH 60V 55A TO-220
More Detail: N-Channel 60V 55A (Tc) 95W (Tc) Through Hole TO-22...
DataSheet: STP55NF06L datasheetSTP55NF06L Datasheet/PDF
Quantity: 1000
1 +: $ 1.14030
50 +: $ 0.91854
100 +: $ 0.82662
500 +: $ 0.64294
1000 +: $ 0.53272
Stock 1000Can Ship Immediately
$ 1.25
Specifications
Vgs(th) (Max) @ Id: 1.7V @ 250µA
Package / Case: TO-220-3
Supplier Device Package: TO-220AB
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 95W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 1700pF @ 25V
Vgs (Max): ±16V
Gate Charge (Qg) (Max) @ Vgs: 37nC @ 4.5V
Series: STripFET™ II
Rds On (Max) @ Id, Vgs: 18 mOhm @ 27.5A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V, 5V
Current - Continuous Drain (Id) @ 25°C: 55A (Tc)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube 
Description

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<!DOCTYPE HTML> <html> <head> <title>STP55NF06L application field and working principle</title> </head> <body> <h2>STP55NF06L application field and working principle</h2> <p>The STP55NF06 is a low level N-channel enhancement mode field effect transistor, primarily designed as an on/off switch. It belongs to STMicroelectronics\' impressive line of STrip FET devices, which are able to switch high power loads with good efficiency and reliability.</p> <h2>Applications</h2> <p>The STP55NF06L is able to handle large currents up to 55A, so it is suitable for applications such as DC-DC power supplies, automotive power systems, and motor drives. It is also used in telecommunication systems, server and notebook power supplies, white goods and home appliances.</p> <h2>Working Principle</h2> <p>The STP55NF06L is a MOSFET-based power transistor. It consists of an n-type semiconductor surrounded by a heavily doped p-type semiconductor material. When the gate voltage is applied, it creates an electric field which attracts electrons in the n-type material and forms a conducting channel between the source and drain. This results in current flow when a voltage difference is applied between the source and drain terminals. The amount of current flowing through the device is proportional to the gate voltage.</p> <p>The STP55NF06L has an on-state resistance of 0.022 ohms which allows it to switch high current loads with good efficiency. It also has a switching speed of 20ns, which makes it suitable for high frequency applications. In addition, it has a wide voltage range of -55V to 40V and can handle high transient voltages.</p> <p>The STP55NF06L is a versatile device and can be used in a variety of applications. Its low resistance and fast switching speed make it the perfect choice for high power applications.</p> </body> </html>

The specific data is subject to PDF, and the above content is for reference

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