
Allicdata Part #: | 497-6742-5-ND |
Manufacturer Part#: |
STP55NF06L |
Price: | $ 1.25 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | STMicroelectronics |
Short Description: | MOSFET N-CH 60V 55A TO-220 |
More Detail: | N-Channel 60V 55A (Tc) 95W (Tc) Through Hole TO-22... |
DataSheet: | ![]() |
Quantity: | 1000 |
1 +: | $ 1.14030 |
50 +: | $ 0.91854 |
100 +: | $ 0.82662 |
500 +: | $ 0.64294 |
1000 +: | $ 0.53272 |
Specifications
Vgs(th) (Max) @ Id: | 1.7V @ 250µA |
Package / Case: | TO-220-3 |
Supplier Device Package: | TO-220AB |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 95W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1700pF @ 25V |
Vgs (Max): | ±16V |
Gate Charge (Qg) (Max) @ Vgs: | 37nC @ 4.5V |
Series: | STripFET™ II |
Rds On (Max) @ Id, Vgs: | 18 mOhm @ 27.5A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V, 5V |
Current - Continuous Drain (Id) @ 25°C: | 55A (Tc) |
Drain to Source Voltage (Vdss): | 60V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tube |
Description
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<!DOCTYPE HTML> <html> <head> <title>STP55NF06L application field and working principle</title> </head> <body> <h2>STP55NF06L application field and working principle</h2> <p>The STP55NF06 is a low level N-channel enhancement mode field effect transistor, primarily designed as an on/off switch. It belongs to STMicroelectronics\' impressive line of STrip FET devices, which are able to switch high power loads with good efficiency and reliability.</p> <h2>Applications</h2> <p>The STP55NF06L is able to handle large currents up to 55A, so it is suitable for applications such as DC-DC power supplies, automotive power systems, and motor drives. It is also used in telecommunication systems, server and notebook power supplies, white goods and home appliances.</p> <h2>Working Principle</h2> <p>The STP55NF06L is a MOSFET-based power transistor. It consists of an n-type semiconductor surrounded by a heavily doped p-type semiconductor material. When the gate voltage is applied, it creates an electric field which attracts electrons in the n-type material and forms a conducting channel between the source and drain. This results in current flow when a voltage difference is applied between the source and drain terminals. The amount of current flowing through the device is proportional to the gate voltage.</p> <p>The STP55NF06L has an on-state resistance of 0.022 ohms which allows it to switch high current loads with good efficiency. It also has a switching speed of 20ns, which makes it suitable for high frequency applications. In addition, it has a wide voltage range of -55V to 40V and can handle high transient voltages.</p> <p>The STP55NF06L is a versatile device and can be used in a variety of applications. Its low resistance and fast switching speed make it the perfect choice for high power applications.</p> </body> </html>The specific data is subject to PDF, and the above content is for reference
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