STP5NB60

Vgs(th) (Max) @ Id:	5V @ 250µA
Package / Case:	TO-220-3
Supplier Device Package:	TO-220AB
Mounting Type:	Through Hole
Operating Temperature:	150°C (TJ)
Power Dissipation (Max):	100W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	884pF @ 25V
Vgs (Max):	±30V
Gate Charge (Qg) (Max) @ Vgs:	30nC @ 10V
Series:	PowerMESH™
Rds On (Max) @ Id, Vgs:	2 Ohm @ 2.5A, 10V
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	5A (Tc)
Drain to Source Voltage (Vdss):	600V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Obsolete
Packaging:	Tube

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STP5NB60 Application Field and Working Principle

STP5NB60 is a type of insulated-gate bipolar transistor (IGBT) and falls under the category of transistors - FETs, MOSFETs - Single. It is widely used in power-switching applications and switching power supply, especially those demanding high current and high breakdown voltage.The STP5NB60 mainly consists of a diode and an insulated-gate bipolar transistor (IGBT). The diode of this device functions as a bidirectional clamp, providing protection when inductive loads are switched on or off. The IGBT serves as the main current-switching element for controlling the current flow in the circuit. The two structures are arranged in series and share the same housing. This design approach has the advantage of a low on-state voltage drop and elimination of cross-conduction.The working principle is based on a Field Effect Transistor (FET) structure. It has both an insulated gate and a thin-film gate oxide to control the conduction. The insulated gate helps in isolating the current flow to the drain and thus reduces the amount of current that could otherwise cause harmful electromagnetic radiation. In addition, the gate oxide helps in reducing the voltage drop and increasing the switching time of the device.When gate voltage is applied, electrons in the gate region become negatively charged and are repelled away from the gate by a positive electric field. This field freezes the current and also produces a depletion region between the gate and the drain. This depletion region isolates the charge and prevents a current flow.The current flow between the drain and the source is controlled by the drain-gate voltage (Vdg). This voltage controls the depletion region in the device and restricts the current flow to the prescribed limit. When the Vdg is increased, the depletion region is widened and the current is blocked. On the other hand, when Vdg is decreased, the depletion region will be decreased, thus allowing the current flow.In summary, the STP5NB60 has very high current and high breakdown voltage. It can switch off the power effectively and efficiently. It is also relatively inexpensive and easy to integrate into existing circuits. It can be used in the fields of power-switching applications and switching power supply. This makes it one of the most reliable and versatile devices used nowadays.

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