Allicdata Part #: | 497-11233-5-ND |
Manufacturer Part#: |
STP52N25M5 |
Price: | $ 3.46 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | STMicroelectronics |
Short Description: | MOSFET N-CH 250V 28A TO220 |
More Detail: | N-Channel 250V 28A (Tc) 110W (Tc) Through Hole TO-... |
DataSheet: | STP52N25M5 Datasheet/PDF |
Quantity: | 577 |
1 +: | $ 3.14370 |
10 +: | $ 2.80728 |
100 +: | $ 2.30208 |
500 +: | $ 1.86414 |
Vgs(th) (Max) @ Id: | 5V @ 100µA |
Package / Case: | TO-220-3 |
Supplier Device Package: | TO-220 |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 110W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1770pF @ 50V |
Vgs (Max): | ±25V |
Gate Charge (Qg) (Max) @ Vgs: | 47nC @ 10V |
Series: | MDmesh™ V |
Rds On (Max) @ Id, Vgs: | 65 mOhm @ 14A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 28A (Tc) |
Drain to Source Voltage (Vdss): | 250V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
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The STP52N25M5 is one of the most widely used and versatile transistors available in the market. It belongs to the field-effect transistor (FET) family, which is typically used as an input amplifier in many electronic applications. The STP52N25M5 in particular is a single FET with an N-channel MOSFET. It is widely used in automotive, home appliance, industrial and telecom applications and is suitable for a wide range of different applications such as low-noise amplifiers and power amplifiers. The STP52N25M5 offers a high drain-source conductance and low capacitance. This makes it ideally suited for power conversion and high-frequency switching.
The STP52N25M5 offers a variety of features that make it ideal for many types of applications. It has a low on-resistance, a high cutoff frequency, a low saturation voltage, and a high drain-source breakdown voltage. This combination of features results in the STP52N25M5 being able to switch very quickly while handling high currents. It can also operate over a wide range of temperatures, allowing it to remain stable even in extreme environments. It has a maximum drain-source voltage of 20V and a maximum gate-source voltage of 4.5V. The STP52N25M5 also offers excellent ESD protection.
The working principle of the STP52N25M5 is based on the basic principles of field-effect transistor technology. It consists of three terminals: the gate, drain, and source. The gate is the controlled terminal, through which the current is controlled by an external voltage. The voltage applied to the gate forms an electrical field that can alter the characteristics of the channel between the drain and the source, which in turn controls the current flowing through the transistor.
The device can be used in a variety of different modes, including enhancement mode and depletion mode. In the enhancement mode, the transistor is switched on or off based on an applied gate voltage. If the gate voltage is low, the device will be turned off, and if the gate voltage is high, the device will be turned on. In the depletion mode, the device is on if the gate voltage is low and off if it is high.
The field of applications for the STP52N25M5 is wide-ranging and includes automotive, home appliance, industrial and telecom applications. In automotive applications the device is used in high voltage DC drive circuits, low side switched for generic motor drives, and provide power to a variety of automotive components. In home appliance applications, the device can be used to control current in electric motors and solenoids, control fan speeds, and manage switching systems. In industrial applications, the device is used to control current in switches and sensors, and as a low side switch in higher power circuits. In telecom applications, the device is used in amplifier circuits, and as a transmitter or receiver of signals.
The STP52N25M5 is an advanced and highly reliable transistor that offers excellent performance in a wide range of applications. Its low on-resistance, high cutoff frequency, low saturation voltage, and high drain-source breakdown voltage make it suitable for a variety of applications. Its versatile nature and wide range of features make it an excellent choice for many types of applications.
The specific data is subject to PDF, and the above content is for reference
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