STP5NK80Z

Vgs(th) (Max) @ Id:	4.5V @ 100µA
Package / Case:	TO-220-3
Supplier Device Package:	TO-220AB
Mounting Type:	Through Hole
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	110W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	910pF @ 25V
Vgs (Max):	±30V
Gate Charge (Qg) (Max) @ Vgs:	45.5nC @ 10V
Series:	PowerMESH™
Rds On (Max) @ Id, Vgs:	2.4 Ohm @ 2.15A, 10V
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	4.3A (Tc)
Drain to Source Voltage (Vdss):	800V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Active
Packaging:	Tube

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Introduction

The STP5NK80Z is a power MOSFET developed by STMicroelectronics. It is a N-channel vertical double diffused MOSFET that is suitable for high power applications and is designed to switch over a wide range of applications. This transistor can be used to build a device that can switch-relate between several power states. It is designed to operate at medium and high power at various frequencies, and has high temperature and surge tolerance.

Application Field

STP5NK80Z is a power transistor that can be used in a wide range of industries, applications and products. It is an ideal solution for power control and energy conversion in wind energy and appliance control applications. The transistor is capable of switching up to 7.5A at 80V and is able to handle large currents with few external components. This MOSFET can also be used for high power switching and synchronous rectification by switching multiple loads in series and/or parallel. Furthermore, it is suitable for charging applications such as electric vehicles, power supplies and chargers.

Working Principle

The STP5NK80Z works based on the principle of a vertical double diffused MOSFET. It is comprised of two layers of silicon dioxide sandwiched around a conductive channel, with a gate and source to control the switching between the conductive channel and the source. The gate voltage is used to control the electrical current flow and capacitance of the MOSFET. When the gate voltage is increased the electrical current and capacitance of the channel increases, allowing more current to flow under a given voltage. Conversely, when the gate voltage is decreased the electrical current and capacitance of the channel decreases, allowing less current to flow under a given voltage. In this way, the transistor can be used to switch between multiple power states.

Conclusion

The STP5NK80Z is a powerful MOSFET transistor with a wide range of application fields. It is capable of switching up to 7.5A at 80V and has a high temperature and surge tolerance. The working principle of the transistor is based on the vertical double diffused MOSFET, where the gate voltage is used to control the electrical current and capacitance flow. This transistor can be used to switch between multiple power states, making it a great choice for wind energy and appliance control applications, as well as high power charging applications.

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