STW13009 Allicdata Electronics
Allicdata Part #:

497-3555-ND

Manufacturer Part#:

STW13009

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: STMicroelectronics
Short Description: TRANS NPN 400V 12A TO247
More Detail: Bipolar (BJT) Transistor NPN 400V 12A 125W Throug...
DataSheet: STW13009 datasheetSTW13009 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tube 
Part Status: Obsolete
Transistor Type: NPN
Current - Collector (Ic) (Max): 12A
Voltage - Collector Emitter Breakdown (Max): 400V
Vce Saturation (Max) @ Ib, Ic: 2.5V @ 3A, 12A
Current - Collector Cutoff (Max): --
DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 5A, 5V
Power - Max: 125W
Frequency - Transition: --
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247-3
Description

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The STW13009 is a single N-channel enhancement-mode field-effect transistor. It is designed for applications requiring high drain current and can provide on-state RDS(on) of up to 6.3mΩ. This type of transistor is commonly used in power conversion applications such as DC-DC converters and motor control applications. It is also suitable for high-efficiency energy systems.

The STW13009 transistor has a maximum drain current of 12A and a maximum drain-source voltage of 100V. It is available in both four-pin and five-pin packages. It is able to operate at temperatures between -55°C and 150°C. The device also features an ESD protection of 8kV HBM.

The STW13009 transistor is designed to function as a switch. When a positive gate voltage is applied to the Gate terminal, the transistor turns on and allows current to flow from the Source to the Drain. The amount of current that can flow depends on the applied voltage and the resistance of the device. When the gate voltage is decreased, the transistor turns off and the current flow is stopped.

The STW13009 transistor utilizes a silicon epitaxial unit with a double diffused N-channel MOSFET that provides an enhanced switching performance. The built-in S-shaped drain characteristics provide fast switching and improved thermal performance. The optimized gate charge characteristics enable high efficiency and improved system power density in DC-DC converters.

The STW13009 also offers golden source (G/S) and drain (D/S) terminals that provide improved reliability. These pins are connected to dedicated contacts on the package, which allow for improved ESD performance and enhanced switch break-noise immunity. The G/S and D/S pins also improve the electrical noise performance of the transistor.

The STW13009 transistor is a versatile component that can be used for a variety of applications. It is suitable for DC-DC converters, motor control designs, and wideband RF amplifiers. It can also be used in automotive, consumer, and industrial applications that require efficient power management.

In summary, the STW13009 is a single N-channel enhancement-mode field-effect transistor, which is designed for applications requiring high drain current. It can provide on-state RDS(on) of up to 6.3mΩ, and is available in both four-pin and five-pin packages. It is optimized for fast switching and improved thermal performance, and features enhanced ESD protection and improved electrical noise performance. It can be used for a variety of applications, including DC-DC converters, motor control designs, and wideband RF amplifiers.

The specific data is subject to PDF, and the above content is for reference

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