STW14NK60Z Allicdata Electronics
Allicdata Part #:

STW14NK60Z-ND

Manufacturer Part#:

STW14NK60Z

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: STMicroelectronics
Short Description: MOSFET N-CH 600V 13.5A TO-247
More Detail: N-Channel 600V 13.5A (Tc) 160W (Tc) Through Hole T...
DataSheet: STW14NK60Z datasheetSTW14NK60Z Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Vgs(th) (Max) @ Id: 4.5V @ 100µA
Package / Case: TO-247-3
Supplier Device Package: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 160W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 2220pF @ 25V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 75nC @ 10V
Series: SuperMESH™
Rds On (Max) @ Id, Vgs: 500 mOhm @ 6A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 13.5A (Tc)
Drain to Source Voltage (Vdss): 600V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tube 
Description

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The STW14NK60Z is a N-channel enhancement mode field effect transistor (FET) with a TO-220FP package. It is a high-speed, high-voltage, and low-on-resistance device commonly used in switch-mode power supplies and high-power motor control applications. It is ideal for high-current applications and can handle up to 14A in continuous conduction. This makes it suitable for high-power and high-speed applications.

The STW14NK60Z is designed to provide high current switching and reliable operation over a wide range of operating temperatures. It has a low on-resistance and can handle high voltage, up to 600V. Its low gate charge reduces the switching time reducing power loss and increasing efficiency. The device features a low input capacitance and low gate-source capacitance for faster switching. It is ESD protected and rated for up to 4kV of Human Body Model (HBM) ESD protection.

The STW14NK60Z is a standard enhancement-mode FET, which means that the channel is initially off and must be turned on by applying a gate-to-source voltage. The FET is controlled by the amount of electric charge that flows between the gate and source terminals. This is known as gate voltage control and is typically applied by the driver circuit. The higher the voltage is applied, the higher the conduction of the FET will be.

Once the gate voltage is applied, the electric field of the built-in electric charge will penetrate into the semiconductive channel thus creating an inversion layer. This layer of inversion acts as a conductive path from the source region to the drain region of the transistor. The drain current flowing through the device is then a function of the gate voltage. As the voltage increases, the drain current increases as well, creating an "on-state" of the device. This is the main idea behind the working principle of an enhancement mode FET.

The STW14NK60Z is an easy-to-use FET with a range of excellent performance characteristics. Its low on-resistance and high current handling capabilities make it suitable for a variety of switch-mode power supply and motor control applications including switched mode power supplies, high speed switching circuits, and power metal-oxide-semiconductor field-effect transistors. Its relatively low complexity and cost make it a common choice for electronics designers looking for a reliable and versatile power management component.

The specific data is subject to PDF, and the above content is for reference

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