Allicdata Part #: | 497-5166-5-ND |
Manufacturer Part#: |
STW120NF10 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | STMicroelectronics |
Short Description: | MOSFET N-CH 100V 110A TO-247 |
More Detail: | N-Channel 100V 110A (Tc) 312W (Tc) Through Hole TO... |
DataSheet: | STW120NF10 Datasheet/PDF |
Quantity: | 2132 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | TO-247-3 |
Supplier Device Package: | TO-247-3 |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 312W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 5200pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 233nC @ 10V |
Series: | STripFET™ II |
Rds On (Max) @ Id, Vgs: | 10.5 mOhm @ 60A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 110A (Tc) |
Drain to Source Voltage (Vdss): | 100V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tube |
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STW120NF10 Application Field and Working Principle
The STW120NF10 is a Power MOSFET (metal oxide semiconductor field effect transistor) which is most often used as a power switch or amplifier. Power MOSFETs find applications in circuits that range from controlling high-power devices such as motors or lights to regulating voltages in power supplies.
A MOSFET is basically an insulated-gate transistor. Rather than using a minimum of two pins to access the gate, four pins are needed to effectively allow the MOSFET to function. About the STW120NF10 specifically, this particular device is made to handle large amounts of power and is packaged in an industry-standard size and pinout. This is a key benefit for applications where size and weight requirements must be taken into consideration.
The most important feature of the STW120NF10 is that it contains a number of protection diodes connected to each of the three terminals. This ensures that the device will operate reliably even when exposed to high-voltages, making it ideal for use in a variety of applications.
The working principle of the STW120NF10 can be broken down into three main steps. First, the gate pin is charged, either through an external power supply or by applying a voltage to the P+ gate pin. This gate voltage causes the current to flow from source to drain and the transistor is triggered. The device then begins to regulate the voltage between source and drain in order to protect the internal components from overvoltage or undervoltage.
The second step is where the transistor’s main function comes into play. Whenever the voltage between source and drain is above the threshold voltage (Vth) of the device, the current will cease to flow and the transistor is then in its “cutoff” state. If the voltage exceeds the breakdown voltage (Vbr) of the device, then the device is in its “saturated” state and the current will continue to flow unrestricted.
The third step is where the main protection comes in. When the current passing through the device is too high, the device will begin to act as a current limiter, dissipating the excess energy in order to protect the device itself from damage. It is important to note that when the device is used as a current limiter, it will also help to lower the input voltage as the current through the device is decreased.
To summarize, the STW120NF10 is a Power MOSFET device that is designed to handle large amounts of power and comes with a number of protection diodes. It is used as a switch or an amplifier and can be used as a current limiter when needed. The working principle involves three main steps.
The specific data is subject to PDF, and the above content is for reference
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