STW15NM60ND Allicdata Electronics
Allicdata Part #:

497-8452-5-ND

Manufacturer Part#:

STW15NM60ND

Price: $ 4.55
Product Category:

Discrete Semiconductor Products

Manufacturer: STMicroelectronics
Short Description: MOSFET N-CH 600V 14A TO-247
More Detail: N-Channel 600V 14A (Tc) 125W (Tc) Through Hole TO-...
DataSheet: STW15NM60ND datasheetSTW15NM60ND Datasheet/PDF
Quantity: 391
1 +: $ 4.54860
10 +: $ 4.41214
100 +: $ 4.32117
1000 +: $ 4.23020
10000 +: $ 4.09374
Stock 391Can Ship Immediately
$ 4.55
Specifications
Vgs(th) (Max) @ Id: 5V @ 250µA
Package / Case: TO-247-3
Supplier Device Package: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 125W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 1250pF @ 50V
Vgs (Max): ±25V
Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V
Series: FDmesh™ II
Rds On (Max) @ Id, Vgs: 299 mOhm @ 7A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Drain to Source Voltage (Vdss): 600V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube 
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The STW15NM60ND, also known as the STripFET VI (SFVI) N-channel MOSFET, is a modern power switching device that offers superior performance in a wide range of power conversion applications. It enables high-efficiency, high-reliability, and low noise performance in both consumer and power applications. It is manufactured by STMicroelectronics, one of the world\'s largest semiconductor companies.

The application fields of the STW15NM60ND MOSFET are mainly in industrial, consumer, telecommunication, computing, and automotive power conversion applications, as well as portable power systems, DC-DC converters, and charging systems. It can be used for low to medium power motor speed control, LED lighting, rectification of local AC voltage, DC-DC switching converters, and in the protection of the power line from over-current, over-voltage, and reverse voltage.

The working principle of the STW15NM60ND MOSFET is based on the depletion-mode enhanced N-channel MOSFET structure. It has a thin-film gate insulated from the drain and source by a silicon nitride (SiN) gate dielectric. The N-channel MOSFET is a voltage-controlled device, which means that the current flowing through it is regulated by the voltage applied to the gate. At negative gate voltage, the MOSFET will be OFF and the device will appear to be pinched off in the ‘OFF’ state. When a positive gate voltage is applied, the device will be ON and will conduct current. The STW15NM60ND features an optimized form factor and produces less than 1% RDSon, allowing for higher onset voltages in low current drain scenarios.

The STW15NM60ND also features a variety of unique features such as high surge capability, low gate charge, and low power loss. The high surge capability of this device makes it suitable for applications that require operating conditions with high-energy transients. The low gate charge characteristic of this device is beneficial in applications that require frequent switching. The low power loss feature is able to reduce heat dissipation and thus increase power efficiency in various applications.

The STW15NM60ND MOSFET is designed to meet the demanding requirements of high-power switching and low-loss applications. It comes in a variety of packages and has good thermal characteristics, making it a good choice for a wide range of applications. Its wide range of applications, optimized form factor, innovative features, and superior performance make the STW15NM60ND an ideal choice for power conversion applications.

The specific data is subject to PDF, and the above content is for reference

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