Allicdata Part #: | 497-7032-5-ND |
Manufacturer Part#: |
STW14NM65N |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | STMicroelectronics |
Short Description: | MOSFET N-CH 650V 12A TO-247 |
More Detail: | N-Channel 650V 12A (Tc) 125W (Tc) Through Hole TO-... |
DataSheet: | STW14NM65N Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | TO-247-3 |
Supplier Device Package: | TO-247-3 |
Mounting Type: | Through Hole |
Operating Temperature: | 150°C (TJ) |
Power Dissipation (Max): | 125W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1300pF @ 50V |
Vgs (Max): | ±25V |
Gate Charge (Qg) (Max) @ Vgs: | 45nC @ 10V |
Series: | MDmesh™ II |
Rds On (Max) @ Id, Vgs: | 380 mOhm @ 6A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 12A (Tc) |
Drain to Source Voltage (Vdss): | 650V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
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The STW14NM60N is a N-channel MOSFET designed to offer superior levels of performance in a wide variety of applications. It is an advanced Power MOSFET designed to meet the needs of demanding high-power switching applications, from high current DC/DC converters to numerous power conversion solutions. This MOSFET is designed using advanced TrenchFET® Power MOSFET technology and features high current rating, low RDS(ON) and fast switching performance, making it ideal for power management as well as for controlling high-frequency switching applications.
The STW14NM60N is a single N-channel, enhancement-mode transistor, which is ideal for use as a switch in power devices, such as power supplies and DC/DC converters. It can also be used as a low-side switch in a motor control circuit. The device is constructed using an advanced TrenchFET® technology process which helps to provide very low on-state resistance and excellent switching characteristics. The STW14NM60N\'s fast switching allows it to provide a high degree of current carrying capability for high frequency, high current applications.
The STW14NM60N\'s wide range of features make it suitable for a variety of applications, including PWM control, motor control, and switching power supplies. It is also suitable for applications such as industrial control and consumer electronics. The device is designed to offer high reliability at elevated temperatures and is also capable of handling high voltage spikes. It is available in an HERAJ package that is designed to provide a very low thermal resistance junction to case and also allows for high circuit board densities.
The STW14NM60N is an enhancement mode device and its gate bias is turned-on with a voltage higher than the power supply voltage, making it suitable for applications that require a low voltage turn-on, such as motor control applications. The device has a high input-impedance, which helps to minimize any gate-charge losses when operating at high frequencies. The device also offers excellent reverse transfer characteristics.
The STW14NM60N offers high levels of robustness and allows for current ratings up to 25A, with a maximum voltage of 1000V. This allows for extremely high power capability, making it suitable for a variety of applications. The device also features an on-state RDS(on) of 0.004Ω, which helps to minimize the power losses associated with switching.
The STW14NM60N has a wide range of features which make it suitable for a variety of applications. Its wide voltage range and fast switching capabilities make it suitable for applications such as switchmode power supplies and motor control circuits. Its low RDS(on) and low gate charge also make it suitable for high-frequency applications such as DC/DC converters. This makes it an ideal device for high-power switching applications.
The specific data is subject to PDF, and the above content is for reference
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