STW15NB50 Allicdata Electronics
Allicdata Part #:

497-2664-5-ND

Manufacturer Part#:

STW15NB50

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: STMicroelectronics
Short Description: MOSFET N-CH 500V 14.6A TO-247
More Detail: N-Channel 500V 14.6A (Tc) 190W (Tc) Through Hole T...
DataSheet: STW15NB50 datasheetSTW15NB50 Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 5V @ 250µA
Package / Case: TO-247-3
Supplier Device Package: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Power Dissipation (Max): 190W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 3400pF @ 25V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 80nC @ 10V
Series: PowerMESH™
Rds On (Max) @ Id, Vgs: 360 mOhm @ 7.5A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 14.6A (Tc)
Drain to Source Voltage (Vdss): 500V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tube 
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

STW15NB50 is an n-channel enhancement mode field-effect transistor (FET). It is a very powerful device with an extremely low on-resistance and extremely low capacitance. The device is embedded with an advanced silicon technology, which means that it is capable of delivering exceptional performance and reliability. The device is mainly used in high-performance applications in consumer, computer and communication systems.

The STW15NB50 is constructed by fabricating a thin film of silicon on an insulating substrate. The device consists of five distinct layers, i.e. the drain, the source, the gate, the dielectric and the substrate. The drain and the source are typically connected to each other, forming a two-terminal device. The gate is isolated from the device by a thin dielectric barrier. Electrical signals can be applied to the gate which produces an electric field around the gate, thus controlling the current flow between the drain and the source.

The basic principle of operation of the STW15NB50 is that when a positive voltage is applied to the gate, the device has a low resistance between the source and drain, allowing current to flow freely. This is known as the “on state”. When the voltage on the gate is reversed, the device has a high resistance, thus blocking the current flow and this is called the “off state”. This simple principle makes the STW15NB50 highly useful in various applications, including logic circuits, switching circuits and power management.

One of the main advantages of the STW15NB50 is its low on-resistance, which means that less voltage is required to turn the device on. This, in turn, leads to greater efficiency and higher power efficiency. Many applications also benefit from the low capacitance of the device, which helps reduce the amount of electromagnetic interference that the device can generate.

The STW15NB50 is widely used in various applications such as display backlights, DC-DC power conversion, overvoltage and current-protection circuits and more. This device is also suitable for use in low-power applications as it is capable of delivering high performance with very low power consumption. It is also suitable for use in high-speed switching applications due to its high switching speed and low gate threshold voltage.

The STW15NB50 can also be integrated into other devices, such as microcontrollers, logic gates and analog circuits, in order to provide additional capabilities. This device is also highly reliable and can be used in high-temperature applications. In addition, it has a low power consumption and is highly resistant to damage from static electricity, making it an ideal choice for use in a variety of electronic products.

In conclusion, the STW15NB50 is a versatile device that can be used in a wide variety of applications due to its low on-resistance and low capacitance, which make it suitable for high-performance applications. In addition, its high switching speed, low gate threshold voltage, low power consumption and high reliability make it an attractive choice for many applications, including display backlights, DC-DC power conversion and overvoltage and current-protection circuits. As such, it is ideal for use in a variety of electronic products and systems.

The specific data is subject to PDF, and the above content is for reference

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