STW11NB80

Vgs(th) (Max) @ Id:	5V @ 250µA
Package / Case:	TO-247-3
Supplier Device Package:	TO-247-3
Mounting Type:	Through Hole
Operating Temperature:	150°C (TJ)
Power Dissipation (Max):	190W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	2900pF @ 25V
Vgs (Max):	±30V
Gate Charge (Qg) (Max) @ Vgs:	70nC @ 10V
Series:	PowerMESH™
Rds On (Max) @ Id, Vgs:	800 mOhm @ 5.5A, 10V
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	11A (Tc)
Drain to Source Voltage (Vdss):	800V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Obsolete
Packaging:	Tube

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STW11NB80 application field and working principle

The STW11NB80 is a N-channel enhancement mode vertical DMOS power Field-Effect Transistor (FET). It is mainly used in the Electronic industries, including Car Amplifier, speaker and Home Appliance market due to its high breakdown voltage and avalanche capability. The transistor offers design features such as low on-resistance, low drive voltage and low gate charge, which provide excellent audio performance.

STW11NB80 Electrical Characteristics

The STW11NB80 is a power transistor which provides high current carrying capacity and it also has a very low on-state resistance. Its maximum threshold voltage is 4.7V and its maximum drain current is 11A. The maximum drain source voltage is 50V, and its avalanche breakdown voltage is 70V.

STW11NB80 Application Fields

The STW11NB80 can be used in applications such as Voltage Regulation, Battery Management, Motor Control, Load Switching, Over Current Protection and DC-DC Converter. It can also be used as an input stage of a Class D audio amplifier, low power application like mobile phone, wireless phone and internet accessories.

Working Principle of STW11NB80

The STW11NB80 is a type of FET which is highly insulated from the conductive substrates. This feature is beneficial for high breakdown voltage and high avalanche capability. The Device is operated in enhancement mode in which the gate voltage has to be higher than the source voltage for current conduction. The gate-source capacitance of the STW11NB80 is very low, therefore very low drive voltage is required. The FET has a gate oxide which is a layer of insulation between the gate and the channel and it is supported by a gate spacer. This gate oxide works as a protection as well as switching element. The current conduction within the device is through the flow of majority carriers which can be electrons for n-channel FETs and holes for p-channel FETs. For the STW11NB80, the majority carrier is electrons from the source region. The source is connected to the substrate and the current flows to pass through the gate oxide, the gate spacer and then to the drain region. The electrons of the source region combine with the electrons of the gate region, which results in a right tilt of the potential barrier, allowing ions to drift to the drain region. As the drain voltage increases, the field strength increases, resulting in an increase in the drain current. This is how a FET works; turning the device on and off depending on the input signal.

Advantages of STW11NB80

The STW11NB80 has several advantages due to its design features. Firstly, it has a low on-state resistance and a low drive voltage that enables a low power consumption. Secondly, it has a low gate charge which eliminates power losses through gate charging. Lastly, the device features high avalanche capability for high drain source voltage operation. The STW11NB80 is a great power transistor which is suitable for applications such as Voltage Regulation, Battery Management, Motor Control, Load Switching, Over Current Protection and DC-DC Converter. It offers excellent audio performance and a low power consumption due to its low on-state resistance and low drive voltage.

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