Allicdata Part #: | 497-3558-5-ND |
Manufacturer Part#: |
STW16NK60Z |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | STMicroelectronics |
Short Description: | MOSFET N-CH 600V 14A TO-247 |
More Detail: | N-Channel 600V 14A (Tc) 190W (Tc) Through Hole TO-... |
DataSheet: | STW16NK60Z Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 4.5V @ 50µA |
Package / Case: | TO-247-3 |
Supplier Device Package: | TO-247-3 |
Mounting Type: | Through Hole |
Operating Temperature: | 150°C (TJ) |
Power Dissipation (Max): | 190W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 2650pF @ 25V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 86nC @ 10V |
Series: | SuperMESH™ |
Rds On (Max) @ Id, Vgs: | 420 mOhm @ 7A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 14A (Tc) |
Drain to Source Voltage (Vdss): | 600V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
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The STW16NK60Z is a high-performance N-channel MOSFET (Metal-Oxide Semiconductor Field–Effect Transistor) from STMicroelectronics. It is designed to switch high-current and high voltage loads while maintaining a low on-state resistance. It features desirable features such as a wide VDS (Drain-Source Voltage) range, low gate-source capacitance, and good thermal characteristics. With its reliable performance, the STW16NK60Z is well suited for a wide range of applications, such as in voltage converters, battery chargers, and other switching power supplies. In this article, we will discuss the application field and working principle of the STW16NK60Z.
Before diving into the details of the STW16NK60Z\'s application field and working principle, it is important to understand the basics of MOSFETs. MOSFETs are semiconductor devices that are made of metal-oxide materials. These materials are used to create an alternately charged electrical field. Normally, a MOSFET has three main terminals: the source, gate, and drain. The source is the negative terminal, while the gate is the positive terminal and the drain is the common terminal. When an electrical current is put through the gate, it triggers a channel between the source and the drain, allowing current to flow between them.
The STW16NK60Z is an N-channel MOSFET with a drain-source voltage of up to 600 V and a drain current of 28 A. It is well-suited for high voltage and high current applications that require a low on-state resistance. Its exceptional VDS range and low gate-source capacitance make it ideal for a wide range of applications. It is also thermally efficient, so it can handle high-temperature environments.
One of the most common applications of the STW16NK60Z is in voltage converters. Voltage converters are traditionally used to transform one voltage level to another. The STW16NK60Z provides an efficient solution for this type of application because of its low gate-source capacitance, which helps to minimize circuit parasitics. Additionally, its high current capability makes it well-suited for high-load voltage-conversion applications, such as in battery chargers.
The STW16NK60Z is also used in switching power supplies. These are devices that are used to convert electrical energy from one form to another. The STW16NK60Z\'s wide VDS range makes it an ideal choice for switching power supplies, as it can efficiently handle high voltage and current loads with very low on-state resistance. Additionally, its low gate-source capacitance helps to minimize switching losses, which in turn helps to improve the overall efficiency of the power supply.
The working principle of the STW16NK60Z is relatively straightforward. Its N-channel MOSFET design allows it to switch from its off-state, where it does not allow current to flow, to its on-state, where it does allow current to flow. When an electrical current is put through the gate, it triggers a channel between the source and the drain, and current can then flow between them. The size of the channel is determined by the applied voltage and the drain current, so when the voltage and current levels are high, the channel size is large and the device can switch high-power loads.
In conclusion, the STW16NK60Z is an N-channel MOSFET from STMicroelectronics that is well-suited for high-voltage, high-current applications. It has a wide VDS range and low gate-source capacitance, which make it an ideal choice for voltage converters and switching power supplies. Its working principle is relatively straightforward; when an electrical current is put through the gate, it triggers a channel between the source and the drain, and current can then flow between them. This makes the STW16NK60Z a reliable and efficient option for a wide range of applications.
The specific data is subject to PDF, and the above content is for reference
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