STW11NK100Z Allicdata Electronics
Allicdata Part #:

497-3255-5-ND

Manufacturer Part#:

STW11NK100Z

Price: $ 4.47
Product Category:

Discrete Semiconductor Products

Manufacturer: STMicroelectronics
Short Description: MOSFET N-CH 1KV 8.3A TO-247
More Detail: N-Channel 1000V 8.3A (Tc) 230W (Tc) Through Hole T...
DataSheet: STW11NK100Z datasheetSTW11NK100Z Datasheet/PDF
Quantity: 1000
1 +: $ 4.47300
10 +: $ 4.17300
100 +: $ 3.66100
1000 +: $ 2.84900
10000 +: $ 1.33500
Stock 1000Can Ship Immediately
$ 4.47
Specifications
Vgs(th) (Max) @ Id: 4.5V @ 100µA
Package / Case: TO-247-3
Supplier Device Package: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 230W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 3500pF @ 25V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 162nC @ 10V
Series: SuperMESH™
Rds On (Max) @ Id, Vgs: 1.38 Ohm @ 4.15A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 8.3A (Tc)
Drain to Source Voltage (Vdss): 1000V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube 
Description

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Introduction: STW11NK100Z

The STW11NK100Z is a N-channel MOSFET, a type of transistor used for electronic switching and amplification. It is used in a wide number of applications, including motor control, switching power supplies, telecommunications and data processing. This MOSFET is a single-packaged transistor, featuring a maximum drain-source voltage of 100V, a maximum drain current of 11A, a maximum on-state resistance of 0.055 Ω, and a maximum gate-source voltage of 12V.

Application Field

The STW11NK100Z is suitable for use in a variety of applications. It is an ideal choice for high-efficiency power supply, motor control and high-voltage switching applications. It can be used in converters, motor drives, power supply circuits and power controllers. It is a highly efficient transistor, capable of switching low current levels while providing high power efficiency.

It is also suitable for use in telecommunications, data processing and advanced analog circuits. The STW11NK100Z is often used in the power stages of routers and switches. It is capable of providing great switching performance which makes it well-suited for high-speed networking applications.

Working Principle

The working principle of the STW11NK100Z MOSFET is based on the principle of a field-effect transistor. The device consists of an N-channel MOSFET, which is a type of transistor used to control current flow between two terminals, known as the source and the drain. The gate terminal controls the current flowing between the source and is connected to a voltage source, which, in turn, controls the current that flows through the transistor.

The gate voltage will determine the current flow through the device. When the gate voltage is higher than the drain voltage, current will flow through the transistor. When the gate voltage is lower than the drain, current will be blocked. The STW11NK100Z can also be used in a configuration where the gate and drain voltages are the same, which is known as the linear region. In this configuration, current can be controlled by the gate voltage, allowing for more precise and efficient control of the transistor.

Conclusion

The STW11NK100Z is an ideal choice for many power supply, motor control and high-voltage switching applications. It is capable of providing high power efficiency and precise control, making it a popular choice for a variety of industries. The STW11NK100Z operates based on the principle of a field-effect transistor, and can be used to control the current flow between two terminals, known as the source and the drain. The gate voltage can be used to control the current flowing through the device, allowing for more efficient control of the transistor.

The specific data is subject to PDF, and the above content is for reference

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