STW13N95K3

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

STW13N95K3 is a type of transistor, specifically a field effect transistor. The transistor acts as an electronic switch allowing current to pass between two points in a circuit. Transistors come in many different shapes and sizes, but all perform the same basic function. STW13N95K3 is a MOSFET (Metal Oxide Semiconductor Field Effect Transistor). It is part of STMicroelectronics’ STripFET family of products, designed for applications like electronic switching, power management, and high-frequency amplification. This article provides an overview of STW13N95K3, including the device’s application fields, design, and working principle.

Device Overview

STW13N95K3 is a N-type enhancement mode power MOSFET. It is a single vertical DMOS transistor with a drain current of 13 A. The device’s operating temperature range is -55°C to 175°C and its maximum junction temperature is 175°C. The drain-source voltage is 95V and the gate threshold voltage is 3V. It is a low on-resistance device with a low gate charge, making it ideal for high efficiency applications.

Application Fields

STW13N95K3 is designed for a wide range of applications, including:

• Power Management
• Motor Control
• DC-DC Converters
• Lighting Control
• Power Supplies
• Low-Side Switches

The device has low on-resistance, making it ideal for applications requiring low power consumption. Its low gate charge also makes it suitable for high frequency switching applications.

Design

STW13N95K3 is a vertical DMOS transistor that consists of a trench structure, high-speed trench gate, self-aligned source and drain area, and a connection between the drain and source. The device’s drain-source blocking voltage is 95V and its threshold voltage is 3V. The transistor has an avalanche energy rating of 450mJ and a maximum operating temperature of 175°C. The device’s dimensions are 8mm x 8mm x 3.5mm.

Working Principle

STW13N95K3 operates according to the ‘field effect’ principle. A small electrical signal applied to the gate turns on the device, allowing current to flow between the drain and source. The current flow is controlled by the applied voltage and can be adjusted with a positive or negative voltage at the gate. As the voltage applied to the gate increases, the current flowing through the transistor increases.

The addition of an ‘inversion layer’ between the gate and drain provides gate to source insulation, helping to protect the device against overloads and transient voltages. This helps to extend the device’s operating life and reduce its susceptibility to failure.

Conclusion

STW13N95K3 is a MOSFET power device designed for a wide range of applications, including power management, motor control, and lighting control. It has a drain-source voltage of 95V, a gate threshold voltage of 3V, and an avalanche energy rating of 450mJ. The device works by the ‘field effect’ principle and an inversion layer provides gate to source insulation and helps to reduce the device’s susceptibility to overloads and transient voltages.

The specific data is subject to PDF, and the above content is for reference