STW15N80K5 Allicdata Electronics
Allicdata Part #:

497-13447-ND

Manufacturer Part#:

STW15N80K5

Price: $ 4.16
Product Category:

Discrete Semiconductor Products

Manufacturer: STMicroelectronics
Short Description: MOSFET N CH 800V 14A TO-247
More Detail: N-Channel 800V 14A (Tc) 190W (Tc) Through Hole TO-...
DataSheet: STW15N80K5 datasheetSTW15N80K5 Datasheet/PDF
Quantity: 99
1 +: $ 4.15800
10 +: $ 4.03326
100 +: $ 3.95010
1000 +: $ 3.86694
10000 +: $ 3.74220
Stock 99Can Ship Immediately
$ 4.16
Specifications
Vgs(th) (Max) @ Id: 5V @ 100µA
Package / Case: TO-247-3
Supplier Device Package: TO-247
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 190W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 100V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 32nC @ 10V
Series: SuperMESH5™
Rds On (Max) @ Id, Vgs: 375 mOhm @ 7A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Drain to Source Voltage (Vdss): 800V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube 
Description

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STW15N80K5 is a popular single MOSFET semiconductor IC that is used widely in power electronics and in integrated circuit design. It is commonly known as an Insulated-Gate Bipolar Transistor (IGBT). The unique feature of this MOSFET is its ability to switch quickly and quietly between two different voltage levels using a small external gate voltage.

An MOSFET is a field effect transistor with an insulated gate, completely separated from the main flow of current, used in the control of current or voltage in electronic circuits. The gate is typically either a reverse-biased junction or a metal oxide field effect component (MOSFET). When the gate is connected to a voltage source, the voltage applied to the gate causes a change in the conductivity of the channel. The conductivity of the channel changes depending on the voltage applied to the gate voltage.

The STW15N80K5 is used in several applications including bipolar power electronics, high-power lighting, power supplies, dc/ac inverters, controllers, amplifiers, switching converters, motor control, instrumentation, satellite communications and low-power switching applications.

The working principle of this MOSFET is based on the principles of electron mobility and the effects of an electric field. In most MOSFETS the main component of the device is the gate. The gate consists of the metal oxide layer on top of the semiconductor material. The electric field created by the applied voltage causes the movement of electrons in the semiconductor material according to electrostatic principles, reducing the barrier between the source and the drain, allowing current flow between the two terminals.

The STW15N80K5 MOSFET is specifically designed to offer improved switching performance and low gate drive requirements. It also has the highest level of surge current capability among MOSFETs in its class. It provides excellent high-speed switching and ultra-low on-state resistance to improve efficiency. The combination of its low gate drive requirements and high levels of surge current makes the STW15N80K5 ideal for use in high-frequency switching applications such as high-current power MOSFETs.

In summary, the STW15N80K5 is a popular single MOSFET semiconductor IC that is used widely in power electronics, high-power lighting and integrated circuit design. Working on the principles of electron mobility, it is specifically designed to offer improved switching performance and low gate drive requirements. It also has the highest level of surge current capability, making it ideal for use in high-current power MOSFETs. Therefore, it is a great choice for a wide variety of applications.

The specific data is subject to PDF, and the above content is for reference

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