Allicdata Part #: | 497-16340-5-ND |
Manufacturer Part#: |
STW18N60DM2 |
Price: | $ 2.30 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | STMicroelectronics |
Short Description: | MOSFET N-CH 600V 12A |
More Detail: | N-Channel 600V 12A (Tc) 90W (Tc) Through Hole TO-2... |
DataSheet: | STW18N60DM2 Datasheet/PDF |
Quantity: | 565 |
1 +: | $ 2.09790 |
30 +: | $ 1.69344 |
120 +: | $ 1.52418 |
510 +: | $ 1.18546 |
1020 +: | $ 0.98224 |
Vgs(th) (Max) @ Id: | 5V @ 250µA |
Package / Case: | TO-247-3 |
Supplier Device Package: | TO-247 |
Mounting Type: | Through Hole |
Operating Temperature: | 150°C (TJ) |
Power Dissipation (Max): | 90W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 800pF @ 100V |
Vgs (Max): | ±25V |
Gate Charge (Qg) (Max) @ Vgs: | 20nC @ 10V |
Series: | MDmesh™ DM2 |
Rds On (Max) @ Id, Vgs: | 295 mOhm @ 6A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 12A (Tc) |
Drain to Source Voltage (Vdss): | 600V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tube |
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The STW18N60DM2 is a type of Field Effect Transistor (FET), specifically a Power MOSFET, which has a single source, drain, and gate terminal. It has the dual-gate Kelvin construction, which enables it to be used in high-performance circuitry with low power consumption. The STW18N60DM2 is a popular choice for a variety of applications, ranging from consumer electronics and cell phones to power converters, inverters, and motor control.
A FET is a type of transistor that utilizes a thin layer of electrically charged material, known as a “gate”, to control the current flow between two other terminals, known as the “source” and “drain”. The amount of current flow is controlled by the voltage applied to the gate. This makes FETs a great choice for applications requiring switching without creating large amounts of heat.
The STW18N60DM2 is a powerful MOSFET which is capable of switching up to 600V at 18A. It has a typical On-state resistance of 0.004/O and a maximum operating temperature of 175°C. The dual-gate Kelvin construction provides an improved gate voltage control while minimizing the switching losses. Additionally, the device has a low gate charge, making it an ideal choice for applications that require high speeds and rapid switching.
MOSFETs such as the STW18N60DM2 are excellent choice for use in applications such as switching power supplies, battery chargers, motor drives, motion control, power conversion, and power factor control. The device is capable of switching rapidly, at speeds of up to 30Mhz and can handle large amounts of current reliably. The STW18N60DM2 is also well-suited for use in power conditioning systems for renewable energy sources, such as solar and wind, and is ideal for applications that require low voltage and high current, such as those found in consumer electronics.
The STW18N60DM2 is designed for use in a variety of applications and can be used in both linear and switching circuits. It features a breakdown voltage of 600V and a gate-source threshold voltage of 1.9V, while also providing excellent thermal stability. The device also has a very low gate charge and is capable of switching rapidly and with low losses. Additionally, the STW18N60DM2 is extremely reliable and has a high maximum operating temperature of 175°C.
In summary, the STW18N60DM2 is an ideal choice for a variety of applications and can be used in both linear and switching circuits. It features a wide range of features, making it well suited for use in power conversion and renewable energy systems. With its low On-state resistance, high maximum operating temperature, and fast switching speeds, the STW18N60DM2 is the perfect choice for your next project.
The specific data is subject to PDF, and the above content is for reference
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