STW13NM60N Allicdata Electronics
Allicdata Part #:

497-10996-5-ND

Manufacturer Part#:

STW13NM60N

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: STMicroelectronics
Short Description: MOSFET N-CH 600V 11A TO-247
More Detail: N-Channel 600V 11A (Tc) 90W (Tc) Through Hole TO-2...
DataSheet: STW13NM60N datasheetSTW13NM60N Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Vgs(th) (Max) @ Id: 4V @ 250µA
Package / Case: TO-247-3
Supplier Device Package: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 90W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 790pF @ 50V
Vgs (Max): ±25V
Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V
Series: MDmesh™ II
Rds On (Max) @ Id, Vgs: 360 mOhm @ 5.5A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Drain to Source Voltage (Vdss): 600V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tube 
Description

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STW13NM60N is a N-Channel, MOSFET transistor. It is a surface-mount device used in many modern electronic devices to ensure efficient and safe functioning. The N-Channel MOSFET is an important component of a power electric conversion system, and it is capable of controlling voltage in a system by adjusting the drain-source voltage.

The STW13NM60N features a maximum voltage rating of 600 V, maximum current rating of 16 A, and a power dissipation rating of 470 W at a drain source of 10 V. This makes it an ideal choice for large-scale power conversion applications, including AC-DC and DC-DC converters. Its low gate-source capacitance makes it an efficient device which can switch quickly and control high current.

The STW13NM60N is also suitable for use in high-power applications, such as power charging systems, high-power LED lighting, AC Home Appliances, and DC Motor Controls. The low gate-source capacitance of the STW13NM60N also makes it suitable for use as an inverter in high-frequency applications due to its low gate forward voltage.

The working principle of the STW13NM60N MOSFET transistor can be explained as follows. The transistor is a three terminal device, which consists of a source, gate, and a drain. The source acts as the input of the transistor and it applies a voltage between itself and the gate. The gate controls the flow of charge carriers through the drain-source channel. When the gate voltage is increased, the number of charge carriers in the channel increases, allowing more current to flow through the drain-source. This provides the power output necessary to power a device.

The STW13NM60N MOSFET can also be used in applications that require high levels of efficiency, such as in the control of motor speed. The transistor\'s low threshold voltage allows for the motor speed to be accurately controlled, as it enables a small voltage input to cause a significant change in the current flowing through the drain-source. This is especially helpful for applications that require precise control, such as robotics or robotics applications.

The STW13NM60N MOSFET also features protection against thermal overload, which makes it suitable for use in high-temperature environments. Its high threshold voltage makes it ideal for use as an over-current protection device. It also features a fast switching speed, ensuring it can quickly respond to changes in the circuit and provide the required output power.

In conclusion, the STW13NM60N MOSFET is an excellent option for many electronic devices. It can be used in a variety of applications ranging from small-scale to large-scale power conversion systems. Its low gate-source capacitance, high voltage and current ratings, and thermal protection make it an efficient and reliable device. Finally, its fast switching speed and protection against thermal overload make it especially suitable for high-temperature environments and precision-controlled applications.

The specific data is subject to PDF, and the above content is for reference

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