STW17N62K3

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The STW17N62K3 is an energy-saving, cost-effective power MOSFET (metal oxide semiconductor field effect transistor) that can be used in a wide variety of applications as it offers a low gate charge and low power loss. As a single in series with the main switch, the STW17N62K3 can provide current limiting protection. It is also suitable for low power switching applications and other applications that need low side current regulation.

The STW17N62K3 is a single N-channel enhancement mode FET (field effect transistor). This type of transistor uses voltage to control the current flow between its source and drain. It can be thought of as a variable resistor, where the resistance can be varied by varying the gate voltage. The size of the gate determines the magnitude of the drain current, and thus the current that can flow through the entire circuit. The STW17N62K3 has a maximum drain current of 17A and peak pulse drain current of 25A, making it suitable for a variety of high power applications.

The STW17N62K3 is a great choice for applications that require low switching loss and low input capacitance. Since it also has a low gate source voltage (Vgs) of 4.3V, it is well suited for applications that require low power consumption. It is also well-suited for automotive and aviation applications, as its low gate charge, low power loss and high current capabilities make it suitable for harsh environmental conditions.

The STW17N62K3 has a low on-resistance (R DS(on) ) of around 3.4 mΩ and a wide voltage range from 10V to 100V. This makes it ideal for applications that require high current and low losses. Since the STW17N62K3 is an N-channel enhancement mode FET, a higher voltage needs to be applied to the gate in order to turn it on. When the gate voltage is at 0V, the FET is in a “low” state and no current flows. When the gate voltage is greater than the threshold voltage, the FET is in a “high” state, and current flows freely. By controlling the gate voltage, the current flowing through the drain can be controlled.

The STW17N62K3 is a great choice for applications such as LED lighting, motor control and solar power inverter systems. It is also suitable for use in power supplies, since low gate charge and low on-resistance allows for efficient power conversion. Additionally, since it has a wide output voltage range, it can be used in applications that require both high and low voltage levels, such as voltage regulation systems.

The STW17N62K3 is also a good choice for applications that require high levels of accuracy. Due to its low gate charge and low RDS(on) , the voltage drop across the FET is low, which enables precise control of the current running through it. This makes it well-suited for applications such as pulse width modulation, where precise control of the output voltage is required. Since the STW17N62K3 is an N-channel FET, it is also ideal for applications that require both high- and low-side current regulation.

Overall, the STW17N62K3 is a highly versatile and energy-efficient power MOSFET that is suitable for a wide range of high power applications. Its low gate charge, low power loss and low Rdson make it an excellent choice for applications ranging from LED lighting to voltage regulation systems. The STW17N62K3 is also a great choice for applications that require precise current control, such as motor control and pulse width modulation.

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