STW18NK60Z Allicdata Electronics
Allicdata Part #:

497-4422-5-ND

Manufacturer Part#:

STW18NK60Z

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: STMicroelectronics
Short Description: MOSFET N-CH 600V 16A TO-247
More Detail: N-Channel 600V 16A (Tc) 230W (Tc) Through Hole TO-...
DataSheet: STW18NK60Z datasheetSTW18NK60Z Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 4.5V @ 100µA
Package / Case: TO-247-3
Supplier Device Package: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 230W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 3540pF @ 25V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 170nC @ 10V
Series: SuperMESH™
Rds On (Max) @ Id, Vgs: 360 mOhm @ 8A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Drain to Source Voltage (Vdss): 600V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tube 
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

STW18NK60Z is a high voltage power MOSFET transistor designed for high performance, general purpose devices. It is a depletion-mode, N-channel device of planar construction. The devices are designed to handle a wide range of motor control, audio and switching applications. With an easy-to-use package, it is an ideal choice for a wide variety of circuit designs.

STW18NK60Z transistors are available in a variety of packages, including a Thermal Enhanced TO-220, a space-saving UltraSOIC, a PowerPAK SO-8, and a TO-220F. The devices offer excellent on-resistance and transient-switching characteristics, making them suitable for a wide variety of applications, including high-energy and low-noise applications.

The STW18NK60Z has three pins: the gate, pulse, and source. The gate pin is used to turn on and off the device by controlling the voltage applied to it. The pulse pin is used to apply a short pulse to the gate, thereby controlling the on and off states of the device. And the source pin is used to provide the physical connection between the device and the power source.

The working principle of the STW18NK60Z is based on its three pins: the gate, pulse, and source. The gate pin controls the power MOSFET transistor, turning it on and off when a voltage is applied to it. The pulse pin is used to apply a short pulse to the gate, controlling the on and off states of the device. The source pin provides the physical connection between the device and the power source. The pulse applied to the gate creates an electric field, which controls the on and off states of the device.

As a high voltage power MOSFET transistor, the STW18NK60Z is most suitable for a wide range of applications, including motor control, audio, and switching applications. Its extremely low static on-resistance allow it to operate at higher frequencies and provide excellent noise immunity. Additionally, its improved thermal performance ensures a greater degree of reliability over long time periods.

STW18NK60Z can also be used in a variety of low power applications, such as DC-DC converters and low-frequency motor drives. With its improved on-resistance, it is also suitable for switching applications. Furthermore, its fast switching speeds and low power consumption makes it ideal for switching applications where low power consumption and fast switching speeds are important.

Overall, the STW18NK60Z provides excellent performance and reliability for a wide range of applications. With its easy-to-use package, combined with its high on-resistance and improved thermal management, it is an ideal choice for general purpose devices. Furthermore, its low power consumption and fast switching speeds make it suitable for a variety of low power applications.

The specific data is subject to PDF, and the above content is for reference

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