Allicdata Part #: | 497-4422-5-ND |
Manufacturer Part#: |
STW18NK60Z |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | STMicroelectronics |
Short Description: | MOSFET N-CH 600V 16A TO-247 |
More Detail: | N-Channel 600V 16A (Tc) 230W (Tc) Through Hole TO-... |
DataSheet: | STW18NK60Z Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 4.5V @ 100µA |
Package / Case: | TO-247-3 |
Supplier Device Package: | TO-247-3 |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 230W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 3540pF @ 25V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 170nC @ 10V |
Series: | SuperMESH™ |
Rds On (Max) @ Id, Vgs: | 360 mOhm @ 8A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 16A (Tc) |
Drain to Source Voltage (Vdss): | 600V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
STW18NK60Z is a high voltage power MOSFET transistor designed for high performance, general purpose devices. It is a depletion-mode, N-channel device of planar construction. The devices are designed to handle a wide range of motor control, audio and switching applications. With an easy-to-use package, it is an ideal choice for a wide variety of circuit designs.
STW18NK60Z transistors are available in a variety of packages, including a Thermal Enhanced TO-220, a space-saving UltraSOIC, a PowerPAK SO-8, and a TO-220F. The devices offer excellent on-resistance and transient-switching characteristics, making them suitable for a wide variety of applications, including high-energy and low-noise applications.
The STW18NK60Z has three pins: the gate, pulse, and source. The gate pin is used to turn on and off the device by controlling the voltage applied to it. The pulse pin is used to apply a short pulse to the gate, thereby controlling the on and off states of the device. And the source pin is used to provide the physical connection between the device and the power source.
The working principle of the STW18NK60Z is based on its three pins: the gate, pulse, and source. The gate pin controls the power MOSFET transistor, turning it on and off when a voltage is applied to it. The pulse pin is used to apply a short pulse to the gate, controlling the on and off states of the device. The source pin provides the physical connection between the device and the power source. The pulse applied to the gate creates an electric field, which controls the on and off states of the device.
As a high voltage power MOSFET transistor, the STW18NK60Z is most suitable for a wide range of applications, including motor control, audio, and switching applications. Its extremely low static on-resistance allow it to operate at higher frequencies and provide excellent noise immunity. Additionally, its improved thermal performance ensures a greater degree of reliability over long time periods.
STW18NK60Z can also be used in a variety of low power applications, such as DC-DC converters and low-frequency motor drives. With its improved on-resistance, it is also suitable for switching applications. Furthermore, its fast switching speeds and low power consumption makes it ideal for switching applications where low power consumption and fast switching speeds are important.
Overall, the STW18NK60Z provides excellent performance and reliability for a wide range of applications. With its easy-to-use package, combined with its high on-resistance and improved thermal management, it is an ideal choice for general purpose devices. Furthermore, its low power consumption and fast switching speeds make it suitable for a variety of low power applications.
The specific data is subject to PDF, and the above content is for reference
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