
Allicdata Part #: | 497-2772-5-ND |
Manufacturer Part#: |
STW13NB60 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | STMicroelectronics |
Short Description: | MOSFET N-CH 600V 13A TO-247 |
More Detail: | N-Channel 600V 13A (Tc) 190W (Tc) Through Hole TO-... |
DataSheet: | ![]() |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 5V @ 250µA |
Package / Case: | TO-247-3 |
Supplier Device Package: | TO-247-3 |
Mounting Type: | Through Hole |
Operating Temperature: | 150°C (TJ) |
Power Dissipation (Max): | 190W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 2600pF @ 25V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 82nC @ 10V |
Series: | PowerMESH™ |
Rds On (Max) @ Id, Vgs: | 540 mOhm @ 6.5A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 13A (Tc) |
Drain to Source Voltage (Vdss): | 600V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
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The STW13NB60 is a power MOSFET from STMicroelectronics that is specifically designed for applications in high-speed switching. This device provides efficient switching for applications ranging from consumer electronics to industrial equipment. The device is designed to remain active during high-power switching events, allowing for designs that are more reliable and require less maintenance.
In a power MOSFET, the main component responsible for switching high-power events is an insulated-gate bipolar transistor, or IGBT. This device is used to control an electric current by allowing it to flow through a channel between its two terminals. The device\'s gate voltage is what controls the current flow, allowing for efficient switching between high and low current. STMicroelectronics\' STW13NB60 utilizes an IGBT to provide efficient switching in a single power MOSFET.
The working principle of the STW13NB60 is based on the IGBT\'s gate voltage. For example, when the gate voltage is high, more current will flow through the device, allowing for a high-power switching event. The current can be controlled by adjusting the gate voltage between its two terminals. This function is important in helping increase the device\'s efficiency, as it allows for more precise control of the current.
The STW13NB60 is designed to work in a wide range of applications. It can be used in a variety of devices ranging from TVs and radios to remote-controlled toys and motorized vehicles. The device is also capable of operating in extreme temperatures, making it suitable for outdoor applications. Furthermore, the device\'s high switching speed makes it ideal for applications that require quick responses.
The STW13NB60 is an excellent choice for applications needing efficient high-power switching. Its IGBT gate voltage allows for efficient switching, while its wide-temperature and high-speed ratings make it suitable for a variety of applications. Furthermore, its small size makes it a great choice for modern, space-constrained designs.
The specific data is subject to PDF, and the above content is for reference
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