Allicdata Part #: | 497-15012-5-ND |
Manufacturer Part#: |
STW13N60M2 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | STMicroelectronics |
Short Description: | MOSFET N-CH 600V 11A TO-247 |
More Detail: | N-Channel 600V 11A (Tc) 110W (Tc) Through Hole TO-... |
DataSheet: | STW13N60M2 Datasheet/PDF |
Quantity: | 68 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | TO-247-3 |
Supplier Device Package: | TO-247 |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 110W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 580pF @ 100V |
Vgs (Max): | ±25V |
Gate Charge (Qg) (Max) @ Vgs: | 17nC @ 10V |
Series: | MDmesh™ II Plus |
Rds On (Max) @ Id, Vgs: | 380 mOhm @ 5.5A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 11A (Tc) |
Drain to Source Voltage (Vdss): | 600V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tube |
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The STW13N60M2 is a high-performance transistor with applications across a wide range of fields and industries. Its most notable feature is its ability to act as a non-inverting MOSFET, or a metal–oxide–semiconductor field-effect transistor (MOSFET). Such a transistor has a tiny gate voltage, which makes it ideal for use in high-speed switching, voltage regulation, and other applications where low-resistance, high-frequency electrical characteristics are essential.
The MOSFET is capable of varying the width of a channel between the source and drain terminals by controlling the application of an electrical signal to the gate. This is due to the behavior of the electrons near the gate terminal, which are repelled or attracted by the electric force created by the gate voltage. Depending on the voltage, this can either increase or decrease the width of the channel, thus allowing for current to increase or decrease accordingly.
This STW13N60M2 transistor can be used in a wide range of applications, such as switching power supplies, motor drivers, inverter transformers, and other motor-drive applications. It is also capable of switching AC and DC signals, thanks to its wide maximum drain-source voltage. Additionally, it has a low gate charge, which helps to minimize switching losses, thereby reducing the power needed to operate the circuit.
The STW13N60M2 also has excellent thermal characteristics, allowing it to withstand high temperatures with minimal degradation of performance. It also has a low threshold voltage, meaning it is capable of switching ON and OFF with minimal voltage drops. This makes it particularly well-suited for applications that require a minimal amount of power, such as incandescent light ballasts and digital logic circuits.
The STW13N60M2 transistor is also renowned for its high efficiency. This is due to its low on-resistance and high transconductance, which helps to reduce power losses. It also has excellent avalanche energy ratings, which results in fewer thermal energy losses and allows for faster switching times. This makes the transistor suitable for applications where high-frequency signal switching is needed.
The STW13N60M2 is an ideal choice for a variety of applications, providing excellent performance at a great price. Its low gate charge and low threshold voltage, combined with its excellent thermal characteristics make it a great choice for any application requiring high-speed switching, low power usage, and superior switching characteristics.
The specific data is subject to PDF, and the above content is for reference
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