
Allicdata Part #: | 497-7616-5-ND |
Manufacturer Part#: |
STW13NK50Z |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | STMicroelectronics |
Short Description: | MOSFET N-CH 500V 11A TO-247 |
More Detail: | N-Channel 500V 11A (Tc) 140W (Tc) Through Hole TO-... |
DataSheet: | ![]() |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 4.5V @ 100µA |
Package / Case: | TO-247-3 |
Supplier Device Package: | TO-247-3 |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 140W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1600pF @ 25V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 47nC @ 10V |
Series: | SuperMESH™ |
Rds On (Max) @ Id, Vgs: | 480 mOhm @ 6.5A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 11A (Tc) |
Drain to Source Voltage (Vdss): | 500V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
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STW13NK50Z Application Field and Working Principle
STW13NK50Z is a single-channel, a low-voltage insulated gate bipolar transistor (IGBT). It belongs to the Pulse IGBT family of semiconductors and is a key component in many power switching applications, such as in switching power supplies, motors, and automobiles. STW13NK50Z has several advantages over conventional bipolar transistors (BJTs), such as:
- A wide range of breakdown voltages (12-1000V)
- High switching speeds
- Low leakage current
- High switching power capabilities
The STW13NK50Z is a three-terminal device with an emitter, a gate, and a collector. It is a n-channel MOSFET (field effect transistor) manufactured in a Trench process technology. The part consists of a transistor made from a P-type substrate with an N-type epitaxial layer on the bottom and a gate oxide layer. The top of the substrate is the emitter, the middle is the gate, and the bottom is the collector.
The working principle of the STW13NK50Z is based on a field effect transistor. The MOSFET has two types of operation: in the "on" state, it allows current to flow between the emitter and collector; in the "off" state, it will not permit current to flow. The "on" state is controlled by the voltage applied between the gate and source. This causes a buildup of a conducting channel between the source and the drain due to the presence of a depletion layer in the substrate.
When the voltage applied to the gate is below the threshold voltage, the channel will be turned "off" and no current will flow between the source and the drain. However, when the voltage applied to the gate is higher than the threshold voltage, the channel "opens" and current can flow between the source and the drain.
In the STW13NK50Z, the gate voltage must be between 12V and 1000V, with a transition from "off" to "on" taking place around 3.5V. The RDSON of the STW13NK50Z is less than 1.0 ohm and the turn-off time of the device is less than 25ns.
The STW13NK50Z is an ideal solution for a wide range of power switching applications. It has a high current rating, a low RDSON, and fast switching speeds. It is also used in automotive applications, such as in the switching power supplies of electrical control units and actuators. In these applications, STW13NK50Z provides superior performance with low power losses and reduced EMI emission compared to other devices.
The specific data is subject to PDF, and the above content is for reference
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