STW12NK90Z

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T he STW12NK90Z is a N-channel enhancement mode Field Effect Transistor (FET) designed for switching applications. It is manufactured using a combination of high-voltage power MOSFET technology and advanced tunnel oxide gate oxide processing, which provides an industry leading "on-state" resistance, low operating temperature and improved power efficiency. The STW12NK90Z can be used for a variety of switching applications, ranging from high-power radio frequency (RF) switching devices to low-corner frequency audio switches.

The STW12NK90Z FET is a three terminal device. The gate terminal is associated with the electrical control of the FET, and the drain and source terminals are connected to the High and Low (Off-state) transistors respectively. The gate voltage applied to the gate terminal of the FET controls the current flow between the drain and source terminals. The higher the gate voltage applied, the larger the current that can flow through the FET. This property makes FETs an ideal choice for high-current applications, including motor control, charging circuits, power amplifiers and switching circuits.

The STW12NK90Z is an enhancement mode FET, and its mode of operation is illustrated in Figure 1. In the \'on\' state, a voltage of around 0V to 3V is applied to the gate terminal of the FET, and the drain and source terminals connect, allowing current to flow between them. As the applied gate voltage approaches the OFF-state voltage, the drain-source current begins to decrease until the switching device is completely off. The reverse process occurs for \'off\' to \'on\' transitions.

The STW12NK90Z utilizes a "gate-source" structure, which allows for the device to be controlled by a gate voltage. The gate voltage controls the conduction of current between the drain and source terminals, so that when the gate voltage is high, current can flow easily through the device. This type of FET has several advantages over other switching devices, including a high switching speed, low gate drive power consumption, low on-state resistance and a high degree of immunity to noise.

The STW12NK90Z is a very robust device, and is capable of handling a wide range of operating conditions. The device is rated for voltage levels up to 500V and a continuous drain current of up to 15A. The maximum power dissipation is specified at 97W, ensuring that the device can operate reliably in a wide range of applications. The device has an ultra-low on-state resistance of less than 0.4mΩ, minimizing the power loss associated with switching applications.

In conclusion, the STW12NK90Z is an ideal choice for a wide range of switching applications due to its robust design and its high performance characteristics. Its combination of high-voltage power MOSFET technology and advanced tunnel oxide gate oxide processing make it an ideal solution for high-power RF switching, low-corner frequency audio switching, motor control, and charging circuits.

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