| Allicdata Part #: | 497-14579-5-ND |
| Manufacturer Part#: |
STW10N95K5 |
| Price: | $ 3.84 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | STMicroelectronics |
| Short Description: | MOSFET N-CH 950V 8A TO-247 |
| More Detail: | N-Channel 950V 8A (Tc) 130W (Tc) Through Hole TO-2... |
| DataSheet: |  STW10N95K5 Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | $ 3.49020 |
| 30 +: | $ 2.80392 |
| 120 +: | $ 2.55460 |
| 510 +: | $ 2.06858 |
| 1020 +: | $ 1.74460 |
| Vgs(th) (Max) @ Id: | 5V @ 100µA |
| Package / Case: | TO-247-3 |
| Supplier Device Package: | TO-247 |
| Mounting Type: | Through Hole |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 130W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 630pF @ 100V |
| Vgs (Max): | ±30V |
| Gate Charge (Qg) (Max) @ Vgs: | 22nC @ 10V |
| Series: | SuperMESH5™ |
| Rds On (Max) @ Id, Vgs: | 800 mOhm @ 4A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Current - Continuous Drain (Id) @ 25°C: | 8A (Tc) |
| Drain to Source Voltage (Vdss): | 950V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Active |
| Packaging: | Tube |
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The STW10N95K5 is a high-voltage high-frequency vertical N-channel power MOSFET which is designed as an energy-efficient switching device with low on-resistance. This MOSFET has a wide range of applications including motor control, power conversion, and lighting control.
This device features high performance and features overvoltage protection, high efficiency, and low switching losses. Its high voltage operation capability of up to 700V is suitable for power conversion and lighting applications. Additionally, its low on-resistance of 9.5mΩ and low gate charge of 88nC make it an ideal choice for many applications.
In order to preserve power and achieve reliable switching, the STW10N95K5 MOSFET utilizes an high frequency insulated gate technology. By eliminating the need for an external gate driver and reducing gate charge, this technology can achieve fast switching, high efficiency, and good electrical performance. The MOSFET also features overvoltage protection capability which prevents the device from suffering permanent degradation or subthreshold voltage collapse due to overvoltage.
The STW10N95K5 is a single-ended MOSFET device. The device is designed to be controlled by an external gate driver and supports gate-source voltage of +/-15V. This device has a typical fullload efficiency of 95% and an operating temperature range of -55°C to 125°C. It also features a maximum continuous drain current of 8A and a maximum power dissipation of 81W.
The STW10N95K5 is an ideal device to be used in applications that require high voltage operation, fast switching times, and high efficiency. This device can be used in power conversion, motor control, and lighting applications. It is suitable for high-power LED lighting applications due to its low on-resistance, low gate charge, and overvoltage protection capabilities.
The specific data is subject to PDF, and the above content is for reference
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