STW19NM60N Allicdata Electronics
Allicdata Part #:

497-13792-5-ND

Manufacturer Part#:

STW19NM60N

Price: $ 3.07
Product Category:

Discrete Semiconductor Products

Manufacturer: STMicroelectronics
Short Description: MOSFET N-CH 600V 13A TO-247
More Detail: N-Channel 600V 13A (Tc) 110W (Tc) Through Hole TO-...
DataSheet: STW19NM60N datasheetSTW19NM60N Datasheet/PDF
Quantity: 30
1 +: $ 2.79090
10 +: $ 2.49039
100 +: $ 2.04221
500 +: $ 1.65367
1000 +: $ 1.39466
Stock 30Can Ship Immediately
$ 3.07
Specifications
Vgs(th) (Max) @ Id: 4V @ 250µA
Package / Case: TO-247-3
Supplier Device Package: TO-247
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 110W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 1000pF @ 50V
Vgs (Max): ±25V
Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V
Series: Automotive, AEC-Q101, MDmesh™ II
Rds On (Max) @ Id, Vgs: 285 mOhm @ 6.5A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Drain to Source Voltage (Vdss): 600V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube 
Description

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STW19NM60N is a N-channel MOSFET designed and manufactured by Infineon Technologies. It has wide range applications in power switching, mobile communications, and PC power supplies. It also provides high-quality performance and long-term reliability. This paper will discuss the application field and working principle of STW19NM60N.

The STW19NM60N has a low on-resistance of 12.7mΩ, making it an effective power switch. It is designed to be used in medium and high-power switching circuits that require low-dropout and fast switching capabilities. It can also be used in high-current, medium-voltage applications such as DC-DC converters and battery management systems. Its low gate capacitance and fast switching speed make it suitable for high switching frequencies.

The STW19NM60N is a N-channel MOSFET which operates in enhancement mode. It uses the principle of avalanche breakdown for the controlling of conduction in p-type and n-type semiconductors. When the drain-source voltage (Vds) is applied in the forward direction, the semiconductor’s resistance decreases which enables the flow of current through the load. The controlling of the current conduction is done by applying a voltage to the Gate terminal. When the voltage (Vgs) between gate and source is higher than the threshold voltage of the MOSFET (Vt) then the MOSFET’s resistance will decrease which allows current to flow through the load.

The STW19NM60N is available in a variety of packages such as TO-220, SO-8 and D2PAK. It can operate at temperatures up to 175°C and has a maximum drain-source voltage of 600V. It also has a high peak drain current of 46A and can handle up to 37A of continuous drain current. These features make it an ideal choice for high-power switching applications, such as DC motor control.

In conclusion, the STW19NM60N is a high-performance N-channel MOSFET. It has a low on-resistance for efficient and fast switching and can be used in a variety of applications, such as high-power switching and DC motor control. It has a high peak drain current and can operate at temperatures up to 175°C, making it an ideal choice for power management in many applications.

The specific data is subject to PDF, and the above content is for reference

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