Allicdata Part #: | 497-8456-5-ND |
Manufacturer Part#: |
STW3040 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | STMicroelectronics |
Short Description: | TRANS NPN 400V 30A TO-247 |
More Detail: | Bipolar (BJT) Transistor NPN 400V 30A 160W Throug... |
DataSheet: | STW3040 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tube |
Part Status: | Obsolete |
Transistor Type: | NPN |
Current - Collector (Ic) (Max): | 30A |
Voltage - Collector Emitter Breakdown (Max): | 400V |
Vce Saturation (Max) @ Ib, Ic: | 800mV @ 4A, 20A |
Current - Collector Cutoff (Max): | 1mA |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 18 @ 6A, 5V |
Power - Max: | 160W |
Frequency - Transition: | -- |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | TO-247-3 |
Supplier Device Package: | TO-247-3 |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The STW3040 is an electrolyte-gated bipolar junction transistor (BJT) capable of handling up to 7A currents. It is manufactured by Stw Audio, and its main applications are related to transistor circuits, power amplifiers and power supplies. The STW3040 offers excellent features such as low gate capacitance, low on-state gate resistance, high switching speed and excellent stability.
An electron current is created when two semiconductor materials (n-type and p-type) are joined together to form a junction. This junction is known as a bipolar junction transistor or BJT. There are two sides to a BJT: the emitter junction and the collector junction. The emitter junction is a forward biased diode, meaning that electrons can flow from the emitter to the collector. The collector junction is reverse biased and electrons cannot flow from the collector to the emitter; however, a small amount of current can flow due to the potential difference between the two junctions. The gate terminal is used to control the amount of current passing through the transistor.
The STW3040 is a single BJT with its emitter, collector and gate terminals internally connected. When a voltage is applied to the gate terminal, a small current is drawn through the junction, creating a channel between the emitter and collector. This channel allows current to flow between the emitter and collector, allowing the voltage drop across the base-emitter junction to be amplified. The maximum amount of current that can be drawn through the junction is determined by the collector current (Ic) which is directly proportional to the gate current.
The STW3040 is designed for use in a variety of electronics applications, including switching and amplifier circuits, power amplifiers, low voltage power supplies and driver circuits. Its low gate capacitance and low on-state gate resistance provide excellent switching characteristics and make it suitable for high-frequency switching applications. The STW3040 also offers excellent thermal stability, making it suitable for high-temperature environments. It is also designed to withstand high currents, making it suitable for use in high power applications. It is rated to handle up to 7A currents and can handle peak collector currents of up to 15A.
The STW3040 is a versatile device and can be used in a variety of applications. Its low gate capacitance and low on-state gate resistance make it suitable for high-frequency switching applications, while its thermal stability and current handling capabilities make it suitable for a wide range of applications. Its excellent features make it a popular choice for transistor circuits, power amplifiers and power supplies.
The specific data is subject to PDF, and the above content is for reference
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