STW30N20 Allicdata Electronics
Allicdata Part #:

497-5168-5-ND

Manufacturer Part#:

STW30N20

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: STMicroelectronics
Short Description: MOSFET N-CH 200V 30A TO-247
More Detail: N-Channel 200V 30A (Tc) 125W (Tc) Through Hole TO-...
DataSheet: STW30N20 datasheetSTW30N20 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Vgs(th) (Max) @ Id: 4V @ 250µA
Package / Case: TO-247-3
Supplier Device Package: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 125W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 1597pF @ 25V
Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V
Series: STripFET™
Rds On (Max) @ Id, Vgs: 75 mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Drain to Source Voltage (Vdss): 200V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tube 
Description

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The STW30N20 metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of technology found in many circuits that utilize transistors. This semiconductor device has a variety of applications, as well as a few typical-use areas where it excels. It is important to understand the working principles of this device, as well as the best practices for using it for any given application.

To understand the STW30N20 MOSFET, we must first become acquainted with the basics of FETs. FETs are a subset of transistors that operate using a Gate-Source voltage to convert voltage input at the Gate into a current flow between the Source and Drain electrodes. This current flow can then be controlled using the FET’s Gate-Source voltage. This type of configuration is advantageous when battery powered devices require small, low power control signals to relay information to other devices, as it can reduce standby power consumption significantly.

The STW30N20 is an N-channel enhancement mode MOSFET, meaning that its Source is connected to the lower voltage and the Drain is connected to the higher voltage. This is an important distinction, as FETs can come in either P-channel or N-channel varieties. This type of transistor also has a low threshold voltage and a maximum drain source voltage of 200V and can handle up to 20A of current.

The STW30N20 is commonly used in a wide variety of applications. Perhaps its most common use is in voltage-level shifting circuits, where a 3.3V or 5V signal needs to be converted to a lower or higher voltage level without degrading the signal quality. This MOSFET is also used in DC-DC converters, capacitor discharge, and H-bridges for powering stepper motors, as well as a variety of other circuits. Additionally, some very high-power switching applications, such as those found in automotive, audio, and medical equipment, can benefit from the STW30N20’s maximum current handling capabilities.

The working principles of the STW30N20 are relatively straightforward. When the Gate-Source voltage is below the threshold voltage, the transistor will remain switched off and no current will flow between the Source and Drain. When the Gate-Source voltage is greater than the threshold voltage, the transistor will become conducting and current will flow between the Source and Drain. This is known as the ‘on’ condition and is the state that is used to control the flow of current in many types of circuits.

Simply put, the STW30N20 MOSFET is a very useful and versatile device that can handle a wide array of current levels and voltages. This, combined with its relatively low price, has made it a popular choice among engineers and hobbyists for many types of circuits that require controlling current using low voltage signals. By understanding its working principles and typical applications, engineers can easily select the STW30N20 for any given circuit application.

The specific data is subject to PDF, and the above content is for reference

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