| Allicdata Part #: | 497-8795-5-ND |
| Manufacturer Part#: |
STW30NM50N |
| Price: | $ 6.56 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | STMicroelectronics |
| Short Description: | MOSFET N-CH 500V 27A TO-247 |
| More Detail: | N-Channel 500V 27A (Tc) 190W (Tc) Through Hole TO-... |
| DataSheet: |  STW30NM50N Datasheet/PDF |
| Quantity: | 276 |
| 1 +: | $ 6.56460 |
| 10 +: | $ 6.36766 |
| 100 +: | $ 6.23637 |
| 1000 +: | $ 6.10508 |
| 10000 +: | $ 5.90814 |
| Vgs(th) (Max) @ Id: | 4V @ 250µA |
| Package / Case: | TO-247-3 |
| Supplier Device Package: | TO-247-3 |
| Mounting Type: | Through Hole |
| Operating Temperature: | 150°C (TJ) |
| Power Dissipation (Max): | 190W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 2740pF @ 50V |
| Vgs (Max): | ±25V |
| Gate Charge (Qg) (Max) @ Vgs: | 94nC @ 10V |
| Series: | MDmesh™ II |
| Rds On (Max) @ Id, Vgs: | 115 mOhm @ 13.5A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Current - Continuous Drain (Id) @ 25°C: | 27A (Tc) |
| Drain to Source Voltage (Vdss): | 500V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Obsolete |
| Packaging: | Tube |
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STW30NM50N Application Field and Working Principle
STW30NM50N belong to single FETs, MOSFETs. This series of MOSFETs offer high speed switching with low gate charge. With a breakdown voltage range of 30V, they offer high continuing drain current of 50A. STW30NM50N is suitable for high efficiency and power density conversion, power switch and light load switch applications.
Characteristics of STW30NM50N:
- Breakdown voltage: 30V
- Avalanche current up to 8A
- Maximum diode recovery time: 260ns
- Low gate charge: 89nC
- Maximum drain current capability: 50A
STW30NM50N Application Fields
STW30NM50N has a wide range of applications. It is suitable for applications such as DC-DC converters in the automotive industry, DC motors, relay circuits, battery management, power supply for ICT boards, LED drivers in home appliances and LED lighting.
STW30NM50N is also able to provide high efficiency, power density conversion and power switch applications. It is commonly used in devices such as server power supplies, high end industrial automation devices, electrical DC drive systems, etc., to realize high power and low on-resistance devices.
Working Principle of STW30NM50N
STW30NM50N utilizes an N-channel MOSFET. An N-channel MOSFET has an N-type substrate and a pair of gates, with one of the gates connected to the source terminal. When the gate voltage is increased, the amount of current in the channel increases, and the device is turned on. Similarly, when the gate voltage is reduced, the device turns off.
The drain current is controlled by the gate voltage which is set externally. The sounder the gate voltage, the higher the drain current will be. With a maximum carrying current of 50A and a breakdown voltage of 30V, STW30NM50N provides an excellent solution for many power switch applications.
Conclusion
STW30NM50N is a single FETs, MOSFETs offering high speed switching with a low gate charge. With its wide range of applications, it is suitable for devices ranging from servers to power supplies in industrial automation. Moreover, its maximum carrying current and breakdown voltage capabilities are well suited for power switch applications.
The specific data is subject to PDF, and the above content is for reference
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