STW36N60M6 Allicdata Electronics
Allicdata Part #:

497-17553-ND

Manufacturer Part#:

STW36N60M6

Price: $ 4.30
Product Category:

Discrete Semiconductor Products

Manufacturer: STMicroelectronics
Short Description: MOSFET N-CHANNEL 600V 30A TO247
More Detail: N-Channel 600V 30A (Tc) 208W (Tc) Through Hole TO-...
DataSheet: STW36N60M6 datasheetSTW36N60M6 Datasheet/PDF
Quantity: 675
1 +: $ 3.90600
30 +: $ 3.13803
120 +: $ 2.85905
510 +: $ 2.31514
1020 +: $ 1.95252
Stock 675Can Ship Immediately
$ 4.3
Specifications
Gate Charge (Qg) (Max) @ Vgs: 44.3nC @ 10V
Package / Case: TO-247-3
Supplier Device Package: TO-247
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 208W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 1960pF @ 100V
Vgs (Max): ±25V
Series: MDmesh™ M6
Vgs(th) (Max) @ Id: 4.75V @ 250µA
Rds On (Max) @ Id, Vgs: 99 mOhm @ 15A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Drain to Source Voltage (Vdss): 600V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Description

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The STW36N60M6 is a 600V N-channel MOSFET. It is part of STMicroelectronics’ STW Series. This series of devices is well-suited to several different types of applications that require high performance power switching. This article will discuss the application fields and working principle of the STW36N60M6 in detail.

Application Fields

The STW36N60M6 offers a combination of low on-state resistance (RDS(on)) and low gate charge. These advantages make it ideal for Power Factor Correction (PFC) circuits and other applications requiring low losses, such as frequency converters, AC-DC converters and DC-DC converters.

The device is also well-suited for a variety of applications requiring high switching speed. Such applications include motor drives and lamp ballasts, which need both a low RDS(on) and a low gate charge to reduce switching losses and minimize switching noise. The STW36N60M6 also offers a wide range of temperature and current ratings making it suitable for many different types of applications, including automotive and consumer electronics.

Working Principle

The STW36N60M6 is based on the N-Channel MOSFET design. The device consists of a source, gate and drain electrode, separated by an insulated gate, known as the MOS gate dielectric. When the gate is charged with a voltage, electrons become attracted to the gate, forming an inversion layer that acts as a low-resistance conduction channel between the source and the drain. When the voltage is removed, the channel is depleted, blocking current flow.

The advantages of the N-channel MOSFET design are its low on-resistance, fast switching speed, and low gate charge. The low on-resistance ensures that the device can handle higher currents with less power dissipation compared to other types of power switches. The combination of low RDS(on) and low gate charge helps reduce switching losses and eliminates the need for heavy external components. The fast switching speeds also help reduce switching noise and enable the device to be used in applications requiring high frequencies.

The STW36N60M6 offers solid performance, excellent protection from over-current, over-voltage, and reverse-bias conditions, as well as low on-resistance and low gate charge. These features make it an ideal solution for a variety of power switching applications, including PFC circuits, motor drives, lamp ballasts, frequency converters, and DC-to-DC converters.

The specific data is subject to PDF, and the above content is for reference

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