STW31N65M5 Allicdata Electronics
Allicdata Part #:

497-13122-5-ND

Manufacturer Part#:

STW31N65M5

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: STMicroelectronics
Short Description: MOSFET N-CH 650V 22A TO-247
More Detail: N-Channel 650V 22A (Tc) 150W (Tc) Through Hole TO-...
DataSheet: STW31N65M5 datasheetSTW31N65M5 Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 5V @ 250µA
Package / Case: TO-247-3
Supplier Device Package: TO-247
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Power Dissipation (Max): 150W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 816pF @ 100V
Vgs (Max): ±25V
Gate Charge (Qg) (Max) @ Vgs: 45nC @ 10V
Series: MDmesh™ V
Rds On (Max) @ Id, Vgs: 148 mOhm @ 11A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Drain to Source Voltage (Vdss): 650V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube 
Description

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The STW31N65M5 is a voltage-controlled field-effect transistor (FET) with an insulated gate. It is used as an electronic switch in a variety of applications. Generally, FETs are used in applications where high input impedance, low noise, and high switching speed are desired. The STW31N65M5 excels in these areas and is well-suited for applications such as motor drivers, actuators, and other high-power switching applications.

At their most basic, FETs are electrically operated switches used to regulate current flow. The STW31N65M5 is a N-channel MOSFET (metal oxide semiconductor FET), and it is well-suited for applications where high input impedance and low on-resistance are desired. The N-channel MOSFETs have maximum voltage and current ratings that must be considered during application. If these limits are exceeded, the FET may damage, creating an additional expense for repair or replacement of the device.

The STW31N65M5 consists of four basic components: a source, a drain, a gate and a substrate. A voltage applied to the gate of this FET will control the flow of current between the source and the drain. The gate voltage controls the FET’s conductivity and can be used to turn the FET on and off, thereby controlling the current flow. The source and drain are metal contacts, while the gate is an insulated gate and the substrate is an active semiconductor material.

The working principle of the STW31N65M5 is based on a phenomenon known as the ‘depletion region’. This is a region in the active semiconductor material that is formed when a voltage is applied to the gate of the FET. The depletion region forms a barrier between the source and the drain, blocking the flow of electrons. When the voltage applied to the gate is increased, the size of the depletion region decreases, allowing electrons to flow through the FET. As the depletion region decreases, the current flow increases, thereby allowing the FET to control the current flow.

The STW31N65M5 is a well-suited device for applications where high input impedance, low on-resistance, and high switching speed are desired. It is also well-suited for applications where protection of the circuit is required. The STW31N65M5 is often used in motor drivers and other high-power switching applications. It is also commonly used in AC power supplies and other power conversion applications. The STW31N65M5 is a reliable and robust device that can be used for a wide variety of applications.

The specific data is subject to PDF, and the above content is for reference

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