
Allicdata Part #: | 497-16332-5-ND |
Manufacturer Part#: |
STW3N170 |
Price: | $ 3.54 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | STMicroelectronics |
Short Description: | MOSFET N-CH 1700V 2.6A TO247-3 |
More Detail: | N-Channel 1700V 2.6A (Tc) 160mW Through Hole TO-24... |
DataSheet: | ![]() |
Quantity: | 1000 |
1 +: | $ 3.54000 |
10 +: | $ 3.43380 |
100 +: | $ 3.36300 |
1000 +: | $ 3.29220 |
10000 +: | $ 3.18600 |
Vgs(th) (Max) @ Id: | 5V @ 250µA |
Package / Case: | TO-247-3 |
Supplier Device Package: | TO-247-3 |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 160mW |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1100pF @ 100V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 44nC @ 10V |
Series: | PowerMESH™ |
Rds On (Max) @ Id, Vgs: | 13 Ohm @ 1.3A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 2.6A (Tc) |
Drain to Source Voltage (Vdss): | 1700V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tube |
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The STW3N170 is a unique type of transistor that is part of the advanced field-effect transistor (FET) and metal-oxide-semiconductor field-effect transistor (MOSFET) family. It is categorized as a single FET with high power and high-voltage electrical characteristics and is designed to offer high-speed switching and maximum efficiency. The STW3N170 FET is manufactured by SEMIKRON, and is known for its robust design and reliability.
The STW3N170 is a two-terminal device with both pin and source leads. The source pin is usually connected to the drain pin and is generally considered a bi-terminal rather than two single terminals. This allows the device to act as either a transistor or a switch, depending on the application. The device is normally on when voltage is applied to the gate pin. This makes it ideal for controlling high-power applications, such as motor and high-voltage inverters.
The STW3N170 is generally used in applications that require fast switching and high frequency. The device is capable of operating at high differential frequencies of up to 5MHz, making it suitable for high-frequency applications like high-speed digital communications. The device also has a low-voltage drop and can handle temperatures up to 125°C, making it suitable for high-temperature applications.
The STW3N170 has low gate source capacitance and low gate source resistance, which helps reduce power losses and allows for fast switching. The device also has low on-state resistance, making it suitable for automotive and industrial applications. Additionally, it provides a high level of protection against breakdowns, making it particularly suited to applications in critical power systems.
The STW3N170 is designed to be easy to use and is equipped with built-in protection features. The device is protected against reverse voltage, over-voltage, and over-current, making it highly reliable. Additionally, it has a built-in over-voltage protection circuit. This feature helps reduce the risk of damage to the device if an excessive voltage is applied.
The STW3N170 has many applications, ranging from automotive and industrial applications to high-speed digital communications and critical power systems. The device is highly reliable and capable of high-frequency operation. Its robust design and built-in protection features make it an ideal choice for a wide range of applications. The device is manufactured by SEMIKRON and is widely used in the industry.
The specific data is subject to PDF, and the above content is for reference
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