STW33N60M2

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The STW33N60M2 is a state of the art Enhancement-mode vertical double-diffused Metal Oxide Semiconductor Field Effect Transistor (MOSFET) and is capable of providing a high performance bridge power stage. The device features rated maximum breakdown voltage, drain-source voltage and current ratings, together with high DC/DC efficiency and excellent transient response characteristics. Assembled in undersized packages, this series of FETs combines low on-resistance and low parasitic capacitance to provide superior performance in power applications such as server and motherboard designs, AC/DC and DC/DC converters, and network devices. In this article, we provide an overview of the STW33N60M2 application field and the working principle of this FET.

STW33N60M2 Application Field

The STW33N60M2 is specifically designed to provide optimized high current power handling performance. It is typically used in applications such as power supplies, motor control, inverter, and switching power stages with advanced protection features. It is ideally suited for power optimization, high EMI and transient response control, and protection against over-temperature, over-voltage, and short-circuit. Additionally, this FET is also well-suited for PWM-driven applications like high-power amplifiers, portable and handheld devices, and automotive applications. The device is able to provide a high current port in the bridge architecture and is suitable for the generation of an output voltage up to 700V. As the maximum drain-source voltage is 600V, this product provides excellent and reliable operation for powering high-power equipment. In addition, it has excellent high-side blocking capability for applications in automotive, renewable energy, and high-performance motor control.

Working Principle of STW33N60M2

The STW33N60M2 is an enhancement-mode vertical double-diffused Metal Oxide Semiconductor Field Effect Transistor (MOSFET). MOSFETs are voltage-controlled semiconductor devices which are capable of switching high-power loads with excellent efficiency. This FET uses the principle of positive biasing of the semiconductor substrate and negative biasing of the gate in order to control the current flow in the device. Positive voltage is applied to the substrate, making the device more conductive. The gate controls the amount of current that can flow through the substrate. When a negative voltage is applied to the gate, it creates an electric field that opposes the current flow and reduces the conductivity of the device.

The STW33N60M2 is capable of providing very high current ratings due to its high drain-source voltage. The device is offered in an undersized PowerWerx™ package, which enables better signal tracing, improved thermal impedance, increased power density and improved EMI performance. The device has a low on-resistance and low parasitic capacitance, which helps reduce power loss and improve the device’s efficiency. This FET series features over-voltage protection, current limiting, and over-temperature protection to ensure reliable operation in high-power applications.

Conclusion

In conclusion, the STW33N60M2 is a state of the art enhancement-mode vertical double-diffused Metal Oxide Semiconductor Field Effect Transistor (MOSFET) capable of providing a high power performance. It is typically used in power supplies, motor control, inverter, and switching power stages with advanced protection features. Additionally, this device utilizes the principle of positive biasing of the semiconductor substrate and negative biasing of the gate in order to control the current flow in the device. Its features make it well-suited for power optimization, high EMI and transient response control, and protection against over-temperature, over-voltage, and short-circuit. With its high current rating and excellent protection features, the STW33N60M2 is ideal for a variety of applications.

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