| Allicdata Part #: | 497-13888-5-ND |
| Manufacturer Part#: |
STW36NM60ND |
| Price: | $ 4.68 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | STMicroelectronics |
| Short Description: | MOSFET N-CH 600V 29A TO-247 |
| More Detail: | N-Channel 600V 29A (Tc) 190W (Tc) Through Hole TO-... |
| DataSheet: |  STW36NM60ND Datasheet/PDF |
| Quantity: | 1000 |
| 600 +: | $ 4.25551 |
Specifications
| Vgs(th) (Max) @ Id: | 5V @ 250µA |
| Package / Case: | TO-247-3 |
| Supplier Device Package: | TO-247 |
| Mounting Type: | Through Hole |
| Operating Temperature: | 150°C (TJ) |
| Power Dissipation (Max): | 190W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 2785pF @ 50V |
| Vgs (Max): | ±25V |
| Gate Charge (Qg) (Max) @ Vgs: | 80.4nC @ 10V |
| Series: | Automotive, AEC-Q101, FDmesh™ II |
| Rds On (Max) @ Id, Vgs: | 110 mOhm @ 14.5A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Current - Continuous Drain (Id) @ 25°C: | 29A (Tc) |
| Drain to Source Voltage (Vdss): | 600V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Active |
| Packaging: | Tube |
Description
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The STW36NM60ND is a high performance N-channel power MOSFET, which is commonly used in many power electronics applications. It is a single device and is based on the advanced vertical trench technology. The STW36NM60ND has an excellent RDS(on) which makes it suitable for use at higher currents. Its breakdown voltage is also good so it can be used in a wide range of applications.The STW36NM60ND works by using a process called MOSFET technology. In this process, a metal-oxide-semiconductor field effect transistor (MOSFET) is used as a switch. The MOSFET consists of a gate, source and drain electrodes that control the flow of electrons through the device. When a voltage is applied to the gate of the MOSFET, it creates an electric field. This electric field is used to control the flow of electrons between the source and drain. In this way, current can be switched on and off as needed, allowing for precise and efficient control of power.The STW36NM60ND is used in a variety of power electronics applications due to its low on-state resistance (RDS(on)) and its high breakdown voltage. Its low RDS(on) makes it ideal for applications such as DC/DC converters, load switches and power management ICs which require high efficiency and low heat dissipation. Its high breakdown voltage allows it to be used in high voltage applications such as high voltage power supplies and voltage dividers. It is also used in applications such as motor control, inductive heating and AC/DC converters.In terms of its working principle, the STW36NM60ND works similarly to other MOSFETs. When a gate voltage is applied, a transverse electric field is created which alters the width of the depletion layer created between the source and the drain. This in turn prevents current from flowing from the source to the drain unless the voltage differential between them is equal to or greater than the breakdown voltage of the device. The voltage drop across the device is also affected by its on-state resistance (RDS(on)). The lower the RDS(on), the lower the voltage drop and the more efficient the device.Overall, the STW36NM60ND is a very versatile MOSFET which is suitable for a wide range of power electronics applications. It has a low on-state resistance and a high breakdown voltage, making it suitable for use in high voltage applications. It is also capable of precise and efficient control of power, making it ideal for use in motor control, inductive heating and AC/DC converters.
The specific data is subject to PDF, and the above content is for reference
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