STW36N55M5 Allicdata Electronics
Allicdata Part #:

497-13285-5-ND

Manufacturer Part#:

STW36N55M5

Price: $ 5.54
Product Category:

Discrete Semiconductor Products

Manufacturer: STMicroelectronics
Short Description: MOSFET N CH 550V 33A TO-247
More Detail: N-Channel 550V 33A (Tc) 190W (Tc) Through Hole TO-...
DataSheet: STW36N55M5 datasheetSTW36N55M5 Datasheet/PDF
Quantity: 587
1 +: $ 5.54400
10 +: $ 5.37768
100 +: $ 5.26680
1000 +: $ 5.15592
10000 +: $ 4.98960
Stock 587Can Ship Immediately
$ 5.54
Specifications
Vgs(th) (Max) @ Id: 5V @ 250µA
Package / Case: TO-247-3
Supplier Device Package: TO-247
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Power Dissipation (Max): 190W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 2950pF @ 100V
Vgs (Max): ±25V
Gate Charge (Qg) (Max) @ Vgs: 62nC @ 10V
Series: MDmesh™ V
Rds On (Max) @ Id, Vgs: 80 mOhm @ 16.5A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
Drain to Source Voltage (Vdss): 550V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube 
Description

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STW36N55M5 is a type of single N- channel power MOSFET. This MOSFET has a wide range of applications, such as DC/DC converters, motor control and power supplies. It has a maximum drain current of 55 A and a drain source voltage of 500 V. It is an efficient, low cost, and simple to use FET.

Since MOSFETs are voltage-controlled devices, they are used in a variety of applications when it is not practical to use mechanical switches. STW36N55M5 is commonly used for switching and amplification in high-voltage, high-power applications. A power MOSFET can switch a significant amount of power with a low gate voltage and is ideal for high frequency applications. The STW36N55M5 is capable of operation at frequencies reaching up to 100kHz.

The working principle of a power MOSFET is similar to the working principle of a regular MOSFET. At its most basic, a power MOSFET is composed of an insulated gate, a drain, a source and a body. When a voltage is applied to the gate, a current is generated moving through the channel between the source and drain. This channel is what allows current to flow through the transistor and allows it to be controlled by a low voltage/current signal. The higher the voltage applied to the gate, the higher the current creating a given current within the MOSFET.

Power MOSFETs like STW36N55M5 are commonly used in motor control, SMPS, power factor correction and other power conversion applications. They are also used for light triggering of an inductive load and for voltage switching. Moreover, they can be used as in-line switches for electronic devices that require high-voltage, high-current switching. They are also used to ensure quiet and fast operation in a wide range of systems.

Because of its versatility, the STW36N55M5 is often used in a wide range of high-power and high voltage applications. Its ability to switch current with a low gate voltage makes it particularly useful for high-speed applications. In addition, the MOSFET can operate at higher frequencies, making it suitable for use in applications where frequency response is important. Additionally, its low cost makes it one of the most cost-effective choices available.

In summary, the STW36N55M5 can be used in a wide range of applications including DC/DC converters, motor control, power supplies, and more. It has a high voltage of 500 V and a drain current of 55 A. Its low gate voltage allows for high frequency operation, making it an effective solution for high-power and high-voltage applications. Lastly, it is quite affordable, making it a cost-effective choice.

The specific data is subject to PDF, and the above content is for reference

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