STW35N60DM2

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The STW35N60DM2 is a unipolar, high voltage, insulation gate, N-channel, vertical double diffused MOS field-effect power transistor. It is primarily intended to switch high current and high voltage requirements in all types of inverters, welding machines, and motor drives. In comparison to traditional bipolar power transistors, voltage-controlled MOSFETs have the advantage of having faster switching speeds, higher current-handling capability, and higher temperature ratings.

The STW35N60DM2 is specifically designed with several features that make it well suited for applications such as power converters, high frequency inverters and motor drives that require efficient and simple control. Most notably, the STW35N60DM2 boasts a maximum blocking voltage of 500V, a peak drain current of 35A and an on-resistance of 0.1 Ohms which is competitive for a power transistor of its size.

In terms of construction, the STW35N60DM2 consists of an aluminium nitride (AlN) substrate which is mounted to a n-type silicon epitaxial layer. This structure is then covered with a passivation layer of silica to ensure an inconspicuous surface appearance. The transistor’s drain and source electrodes are connected to its substrate terminals by a process called Schottky contact, or "depletion mode", which enables the transistor’s gate to control the current flow through the drain and source terminals.

The working principle of the STW35N60DM2 is based on the principle of the vertical double diffused MOS type transistor. This type of transistor has two PN junctions, one connecting the drain and gate and the other connecting the source and gate. When a gate voltage is applied to the transistor, it controls the current between the drain and source terminals. This is done by controlling the junction barriers between the source and drain, which allows the STW35N60DM2 to easily switch from low to high conduction mode without a significant voltage difference.

The STW35N60DM2 is also well-suited for use in high-power applications as it features a low Rdson as well as a high switching frequency. Furthermore, the gate threshold voltage of this device is relatively low, meaning it only requires very low levels of voltage to operate. It is also capable of operation up to a temperature of 175° Celsius.

In summary, the STW35N60DM2 is a popular MOSFET power transistor that is suitable for use in a wide range of applications. Its features of high-voltage and current-handling capabilities, low power dissipation and high switching frequency make it an attractive choice for designers looking to increase the efficiency of their designs. Due to its efficient design and competitive performance, the STW35N60DM2 has become a popular choice for use in switching and motor drives.

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