STW30N65M5

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The STW30N65M5 is a type of MOSFET - an electrically operated switch. MOSFETs are commonly used for switching and amplifying electronic signals and voltage. STW30N65M5 is a power MOSFET, meaning that it can deal with higher voltages and currents. Due to its high frequency switching applications, it is ideal for use in high power applications.

The STW30N65M5 is a high voltage N-channel MOSFET with a lateral structure. It has an integral body diode that limits reverse current and two N-type FETs connected in series and arranged horizontally. Unlike the conventional vertical structure of a MOSFET, the STW30N65M5 has an advantageous lateral structure which helps improve its temperature performance.

The STW30N65M5 is capable of dissipating a maximum power of up to 100W. It also has an increased current carrying capacity up to 15A and a breakdown voltage of 600V. Its high current handling makes it ideal for use in power supplies, motor drivers, and DC-DC converters. Moreover, it has a low on-resistance of 30mΩ, meaning that it requires less power to switch.

The STW30N65M5 works on the principle of a transistor action, activating when voltage is applied to the gate electrode. This switch is usually connected between the source and the drain. When the gate voltage is applied, a channel is created between drain and source and current flows through the channel. The current can be controlled by the amount of gate voltage that is applied, meaning that this MOSFET can handle larger currents than conventional transistors.

The STW30N65M5 is a versatile MOSFET which is suitable for a wide range of applications. Its high power handling capability makes it a better choice than standard transistors for high power applications. Additionally, its low on-state resistance and its lateral structure makes it extremely useful for high frequency switching. Moreover, its versatility makes it suitable for use in a variety of applications such as power supplies, motor drivers, DC-DC converters and many more.

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