STW38N65M5 Allicdata Electronics
Allicdata Part #:

497-13124-5-ND

Manufacturer Part#:

STW38N65M5

Price: $ 4.77
Product Category:

Discrete Semiconductor Products

Manufacturer: STMicroelectronics
Short Description: MOSFET N-CH 650V 30A TO-247
More Detail: N-Channel 650V 30A (Tc) 190W (Tc) Through Hole TO-...
DataSheet: STW38N65M5 datasheetSTW38N65M5 Datasheet/PDF
Quantity: 1000
1 +: $ 4.77000
10 +: $ 4.62690
100 +: $ 4.53150
1000 +: $ 4.43610
10000 +: $ 4.29300
Stock 1000Can Ship Immediately
$ 4.77
Specifications
Vgs(th) (Max) @ Id: 5V @ 250µA
Package / Case: TO-247-3
Supplier Device Package: TO-247
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Power Dissipation (Max): 190W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 3000pF @ 100V
Vgs (Max): ±25V
Gate Charge (Qg) (Max) @ Vgs: 71nC @ 10V
Series: MDmesh™ V
Rds On (Max) @ Id, Vgs: 95 mOhm @ 15A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Drain to Source Voltage (Vdss): 650V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube 
Description

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STW38N65M5 is a single field-effect transistor (FET) manufactured by Infineon Technologies, formerly Siemens Semiconductor. It is an N-channel enhancement-mode FET, meaning that it needs an external voltage higher than the gate voltage to turn on and operate correctly. It is primarily used in power converters, especially in switching power supplies and motor control applications. This article explains the working principle and applications of the STW38N65M5 transistor.

Working Principle

An FET, such as the STW38N65M5, is a three-terminal device composed of a source, a drain and a gate. In the N-channel FET, when a voltage higher than the gate voltage is applied to the gate, a current (known as the “channel current”) can flow from the source to the drain. The channel current is controlled by the amount of voltage applied to the gate; the higher the voltage, the higher the channel current. This makes the FET highly effective for controlling the flow of current in various power applications.

The STW38N65M5 transistor is an enhancement-mode FET, which requires a voltage higher than the gate voltage to turn on; the gate needs a gate-source voltage (VGS) above some threshold voltage (Vth) for channel current to flow. The device has a maximum drain source voltage (VDS) of 500V, a continuous drain current (ID) of 38A and a maximum power dissipation (PD) of 280W. In addition, it comes in a TO-262 package type.

Applications

The STW38N65M5 transistor is primarily used in power converters and related applications. Its high ID and PD ratings make it an ideal choice for applications that need to control large amounts of current or power. It is commonly used in switching power supplies, motor control switches and other power-related applications.

The transistor is also used in applications such as AC and DC servo motors, electronic instrumentation, uninterruptible power supplies (UPS), Solar Power Systems, DC-DC converters and battery chargers. Additionally, it is often used for lamp dimming, speed control and thermal protection.

Conclusion

The STW38N65M5 is a single N-channel FET manufactured by Infineon Technologies that is primarily used in power converter applications. It is a very useful device for controlling large currents or powers, and can be used for motor control switches, UPSs, DC-DC converters, and more. With its high ID and PD ratings, the STW38N65M5 is well-suited for any application that needs reliable and accurate power control.

The specific data is subject to PDF, and the above content is for reference

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