| Allicdata Part #: | 497-13124-5-ND |
| Manufacturer Part#: |
STW38N65M5 |
| Price: | $ 4.77 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | STMicroelectronics |
| Short Description: | MOSFET N-CH 650V 30A TO-247 |
| More Detail: | N-Channel 650V 30A (Tc) 190W (Tc) Through Hole TO-... |
| DataSheet: | STW38N65M5 Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | $ 4.77000 |
| 10 +: | $ 4.62690 |
| 100 +: | $ 4.53150 |
| 1000 +: | $ 4.43610 |
| 10000 +: | $ 4.29300 |
| Vgs(th) (Max) @ Id: | 5V @ 250µA |
| Package / Case: | TO-247-3 |
| Supplier Device Package: | TO-247 |
| Mounting Type: | Through Hole |
| Operating Temperature: | 150°C (TJ) |
| Power Dissipation (Max): | 190W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 3000pF @ 100V |
| Vgs (Max): | ±25V |
| Gate Charge (Qg) (Max) @ Vgs: | 71nC @ 10V |
| Series: | MDmesh™ V |
| Rds On (Max) @ Id, Vgs: | 95 mOhm @ 15A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Current - Continuous Drain (Id) @ 25°C: | 30A (Tc) |
| Drain to Source Voltage (Vdss): | 650V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Active |
| Packaging: | Tube |
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STW38N65M5 is a single field-effect transistor (FET) manufactured by Infineon Technologies, formerly Siemens Semiconductor. It is an N-channel enhancement-mode FET, meaning that it needs an external voltage higher than the gate voltage to turn on and operate correctly. It is primarily used in power converters, especially in switching power supplies and motor control applications. This article explains the working principle and applications of the STW38N65M5 transistor.
Working Principle
An FET, such as the STW38N65M5, is a three-terminal device composed of a source, a drain and a gate. In the N-channel FET, when a voltage higher than the gate voltage is applied to the gate, a current (known as the “channel current”) can flow from the source to the drain. The channel current is controlled by the amount of voltage applied to the gate; the higher the voltage, the higher the channel current. This makes the FET highly effective for controlling the flow of current in various power applications.
The STW38N65M5 transistor is an enhancement-mode FET, which requires a voltage higher than the gate voltage to turn on; the gate needs a gate-source voltage (VGS) above some threshold voltage (Vth) for channel current to flow. The device has a maximum drain source voltage (VDS) of 500V, a continuous drain current (ID) of 38A and a maximum power dissipation (PD) of 280W. In addition, it comes in a TO-262 package type.
Applications
The STW38N65M5 transistor is primarily used in power converters and related applications. Its high ID and PD ratings make it an ideal choice for applications that need to control large amounts of current or power. It is commonly used in switching power supplies, motor control switches and other power-related applications.
The transistor is also used in applications such as AC and DC servo motors, electronic instrumentation, uninterruptible power supplies (UPS), Solar Power Systems, DC-DC converters and battery chargers. Additionally, it is often used for lamp dimming, speed control and thermal protection.
Conclusion
The STW38N65M5 is a single N-channel FET manufactured by Infineon Technologies that is primarily used in power converter applications. It is a very useful device for controlling large currents or powers, and can be used for motor control switches, UPSs, DC-DC converters, and more. With its high ID and PD ratings, the STW38N65M5 is well-suited for any application that needs reliable and accurate power control.
The specific data is subject to PDF, and the above content is for reference
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STW38N65M5 Datasheet/PDF