
Allicdata Part #: | 497-2658-5-ND |
Manufacturer Part#: |
STW38NB20 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | STMicroelectronics |
Short Description: | MOSFET N-CH 200V 38A TO-247 |
More Detail: | N-Channel 200V 38A (Tc) 180W (Tc) Through Hole TO-... |
DataSheet: | ![]() |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 5V @ 250µA |
Package / Case: | TO-247-3 |
Supplier Device Package: | TO-247-3 |
Mounting Type: | Through Hole |
Operating Temperature: | 150°C (TJ) |
Power Dissipation (Max): | 180W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 3800pF @ 25V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 95nC @ 10V |
Series: | PowerMESH™ |
Rds On (Max) @ Id, Vgs: | 65 mOhm @ 19A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 38A (Tc) |
Drain to Source Voltage (Vdss): | 200V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
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The STW38NB20 is a sensitive gate three-terminal Power MOSFET. This device is specifically designed for use in off-line, DC-DC converters, AC-DC converters and other switching power supply circuits. It consists of an N-channel insulated-gate FET and a monolithic integrated gate circuit, which offers improved performance and simplicity of design for many off-lane applications.
The STW38NB20 offers very low RDS(on) and high efficiency in both DC-DC and AC-DC switching applications due to its low gate-source capacitance and efficient packaging. In addition, it also has integrated protection features such as: a current sensing resistor, an over-voltage protection circuit, and a temperature protection circuit.
The STW38NB20 has a wide range of applications including; DC-DC converters, AC-DC converters, motor control, LED lighting and other switching power supply circuits. With its efficient power management design features and integrated protection features, the STW38NB20 provides high performance and reliability in a wide range of power conversion applications.
Working Principle
The basic principle of operation for the STW38NB20 is based on the metal-oxide-semiconductor field-effect transistor (MOSFET). A MOSFET is a type of transistor that uses an electric field to control the flow of current. Unlike a regular bipolar transistor, a MOSFET does not require a current to flow through the gate in order to create a channel for the current to flow in the drain.
The STW38NB20 has an integrated gate circuit which means that the gate voltage can be adjusted to control the MOSFET’s on-resistance. This allows the switching speed of the MOSFET to be adjusted, so that the device can be used in high frequency applications, such as DC-DC converters. The integrated gate circuit also offers improved efficiency in the gate drive circuit.
The STW38NB20 also has an integrated current sensing resistor which allows the device to provide current limiting protection. This is useful in applications such as AC-DC converters, where the peak current can reach several hundred amps. The integrated temperature protection circuit also provides over-temperature protection, offering increased safety and reliability.
In conclusion, the STW38NB20 is a high-performance power MOSFET which is suitable for use in a wide range of applications, including DC-DC converters and AC-DC converters. The integrated protection features, such as an integrated current sensing resistor and over-temperature protection, provide increased safety and reliability. The low RDS(on) and high efficiency also make the STW38NB20 an ideal choice for many off-line applications.
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