STW37N60DM2AG Allicdata Electronics
Allicdata Part #:

497-16103-5-ND

Manufacturer Part#:

STW37N60DM2AG

Price: $ 3.93
Product Category:

Discrete Semiconductor Products

Manufacturer: STMicroelectronics
Short Description: MOSFET N-CH 600V 28A
More Detail: N-Channel 600V 28A (Tc) 210W (Tc) Through Hole TO-...
DataSheet: STW37N60DM2AG datasheetSTW37N60DM2AG Datasheet/PDF
Quantity: 619
1 +: $ 3.93120
10 +: $ 3.81326
100 +: $ 3.73464
1000 +: $ 3.65602
10000 +: $ 3.53808
Stock 619Can Ship Immediately
$ 3.93
Specifications
Vgs(th) (Max) @ Id: 5V @ 250µA
Package / Case: TO-247-3
Supplier Device Package: TO-247
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 210W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 2400pF @ 100V
Vgs (Max): ±25V
Gate Charge (Qg) (Max) @ Vgs: 54nC @ 10V
Series: Automotive, AEC-Q101, MDmesh™ DM2
Rds On (Max) @ Id, Vgs: 110 mOhm @ 14A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
Drain to Source Voltage (Vdss): 600V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube 
Description

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The STW37N60DM2AG is a N-channel 600V MOSFET device suitable for medium power switching and motor control applications. The device has a wide operating range of -55C to +150C. It is well suited for medium power switching and motor control applications.

Application Field

The STW37N60DM2AG is commonly used in the fields of automotive, industrial, telecommunications, computers and consumer electronics. It has been designed for use in medium voltage switching applications, such as DC motor control, power supplies, power converters, power amplifiers and high power AC and DC rectification. The device is also suitable for advanced lighting and power control applications such as dimming controls and motor control.

The device is well suited for applications such as photovoltaic inverters, motor drives, UPS systems, power supplies, automotive power systems, battery chargers, high power resistive heating, active filter circuits, and energy storage systems.

Working Principle

MOSFETs (Metal-Oxide Semiconductor Field-Effect Transistors) are voltage-controlled devices that operate using the principle of the field effect. The device consists of a source and a drain terminal separated by a channel, which is controlled by a gate terminal. When a voltage is applied to the gate, electrons are attracted towards the gate terminal, increasing the concentration of charge carriers in the channel, thus allowing current to flow through the device. This is called an "inversion layer".

The current flow through the device is proportional to the gate-to-source voltage, and is controlled by the gate-to-source voltage. The STW37N60DM2AG has a maximum drain-source voltage (Vds) of 600V and a maximum drain current (Id) of 37A. The device also features a low On-State Resistance (RDS(on)), making it ideal for switching applications with low power dissipation.

The device also features a temperature range of -55C to +150C, making it suitable for operating in a wide range of temperatures. Furthermore, the device has a maximum surge current rating of 175A, making it suitable for use in high power applications. The device also features an ESD protection of 2.5 kV.

In summary, the STW37N60DM2AG is a N-channel 600V MOSFET device suitable for medium power switching and motor control applications. The device has a wide operating range of -55C to +150C, making it suitable for a variety of applications, including automotive, industrial, telecommunications, computers and consumer electronics. The device also features a low On-State Resistance, making it suitable for switching applications with low power dissipation, and an ESD protection of 2.5 kV.

The specific data is subject to PDF, and the above content is for reference

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