Allicdata Part #: | 497-5989-5-ND |
Manufacturer Part#: |
STW30NF20 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | STMicroelectronics |
Short Description: | MOSFET N-CH 200V 30A TO-247 |
More Detail: | N-Channel 200V 30A (Tc) 125W (Tc) Through Hole TO-... |
DataSheet: | STW30NF20 Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | TO-247-3 |
Supplier Device Package: | TO-247-3 |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 125W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1597pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 38nC @ 10V |
Series: | STripFET™ |
Rds On (Max) @ Id, Vgs: | 75 mOhm @ 15A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 30A (Tc) |
Drain to Source Voltage (Vdss): | 200V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
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The STW30NF20 is a N-channel MOSFET (metal-oxide-semiconductor field-effect transistor) that has a relatively high current capacity and is capable of operating at high switching frequencies. It is also notable for its low on-resistance, which is critical for efficient power transfer. As a single-gate FET (field effect transistor), it is ideal for applications requiring fast switching speeds and low distortion, such as power amplifiers and power management systems.
The STW30NF20 is a non-isolated (zero voltage) MOSFET. As such, it is designed to operate with a very low, “nearly zero” amount of voltage on its control gate. This allows it to be used in a wide variety of applications which require high switching speeds but don’t have high voltages available. This is particularly useful for power management applications in energy efficient electronics, such as laptops and other portable devices.
The STW30NF20 is also well-suited for medium frequency switching applications, such as motor controllers and switching power supplies. It is able to switch with very low distortion and good efficiency when compared to traditional devices. This is due to its low on-resistance, which is the resistance measured when the device is in the “on state” or conducting. This low resistance helps reduce power loss during switching and improves efficiency.
In terms of its working principle, the STW30NF20 operates by using the gate-to-source voltage (VGS) as the main control signal. When the voltage is applied to the gate, it creates a conductive channel between the source and the drain of the device. This “channel” carries current from the source to the drain, allowing the MOSFET to act as a switch for the desired current flow. The higher the gate voltage, the wider the channel and the higher the amount of current allowed to flow through. The STW30NF20 is also capable of operating in linear mode, where the gate-to-source voltage controls the current flow in a linear fashion rather than as a switch.
In addition to its use in power management applications and medium frequency switching, the STW30NF20 is also a popular choice for microwave ovens and other high-frequency devices. This is due to its high switching speed and low capacitance, which act together to reduce signal distortions. The STW30NF20 is also a popular choice for RF amplifier circuits, as its low distortion characteristics help to improve receiver sensitivity and signal quality.
The STW30NF20 is a versatile, high-performing MOSFET that has a wide range of applications in modern electronics. By combining its low on-resistance, fast switching speed and relatively high current capacity, it is able to provide excellent efficiency and signal control in a variety of different systems.
The specific data is subject to PDF, and the above content is for reference
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