STW32N65M5 Allicdata Electronics
Allicdata Part #:

497-10999-5-ND

Manufacturer Part#:

STW32N65M5

Price: $ 7.32
Product Category:

Discrete Semiconductor Products

Manufacturer: STMicroelectronics
Short Description: MOSFET N-CH 650V 24A TO-247
More Detail: N-Channel 650V 24A (Tc) 150W (Tc) Through Hole TO-...
DataSheet: STW32N65M5 datasheetSTW32N65M5 Datasheet/PDF
Quantity: 518
1 +: $ 7.32060
10 +: $ 7.10098
100 +: $ 6.95457
1000 +: $ 6.80816
10000 +: $ 6.58854
Stock 518Can Ship Immediately
$ 7.32
Specifications
Vgs(th) (Max) @ Id: 5V @ 250µA
Package / Case: TO-247-3
Supplier Device Package: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Power Dissipation (Max): 150W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 3320pF @ 100V
Vgs (Max): ±25V
Gate Charge (Qg) (Max) @ Vgs: 72nC @ 10V
Series: MDmesh™ V
Rds On (Max) @ Id, Vgs: 119 mOhm @ 12A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Drain to Source Voltage (Vdss): 650V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tube 
Description

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The STW32N65M5 is a super-junction MOSFET with a maximum drain-sourcevoltage of 650V, an RDS(ON) rating of 32mΩ in the 4.5V range, and a maximum drain current of 115A. It is an optimal choice for high-side switching applications in SMPS, especially where high voltage and low losses are current in the system.

This MOSFET can be used for sequential switching devices in various applications. It has a narrow switching voltage range, making it well suited for applications where multiple stages need to be switched quickly and efficiently such as audio amplifiers, power inverters and switching power supplies. The integrated diode in the device provides protection against voltage spikes and is optimized for both low forward voltage and low switching loss.

This MOSFET is designed to operate in an N-channel type configuration with a very low gate threshold voltage. It has superior thermal properties, an exceptionally low RDS(ON) and a high level of safe operation even under high temperature conditions. In addition, it also has a high-speed switching capability and a power cycling capability, as well as an ultra-low gate charge.

The working principle of this MOSFET is based on the charge-transfer mechanism. When a small voltage is applied at the gate terminal, a thin dielectric layer between the source and the gate of the MOSFET causes electrons to move from the source to the gate and a current to be generated. This current controls the drain current and allows the MOSFET to be either fully on or fully off. This switching property makes the MOSFET suitable for applications such as motor and inverter control, automotive power switching, and power supplies.

The STW32N65M5 is an excellent choice for a variety of commercial, residential and industrial applications, such as UPS systems, AC/DC power supplies, motors and inverters, LED lighting and medical device controllers. It is ideal for applications that require a high power switching device with low losses and good over-voltage performance. The MOSFET is available in a number of package styles such as a D2PAK, DPAK and TO-244. It includes all the components necessary for proper operation, such as a gate and source protection diode, the gate-drain drain resistor and the connection pins.

In conclusion, the STW32N65M5 is a versatile and efficient MOSFET with a wide array of uses. The device has excellent thermal performance and a low RDS(ON), allowing it to be used in high-side switching applications. It also has a very low gate threshold voltage, making it suitable for switching applications such as motor and inverter control, automotive power switching and power supplies.

The specific data is subject to PDF, and the above content is for reference

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