STW30N80K5 Allicdata Electronics
Allicdata Part #:

497-17900-ND

Manufacturer Part#:

STW30N80K5

Price: $ 5.38
Product Category:

Discrete Semiconductor Products

Manufacturer: STMicroelectronics
Short Description: MOSFET N-CH 800V 24A TO247-3
More Detail: N-Channel 800V 24A (Tc) 250W (Tc) Through Hole TO-...
DataSheet: STW30N80K5 datasheetSTW30N80K5 Datasheet/PDF
Quantity: 1000
1 +: $ 4.88250
10 +: $ 4.36149
100 +: $ 3.57645
600 +: $ 2.89603
1200 +: $ 2.44243
Stock 1000Can Ship Immediately
$ 5.38
Specifications
Vgs(th) (Max) @ Id: 5V @ 100µA
Package / Case: TO-247-3
Supplier Device Package: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 250W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 1530pF @ 100V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 43nC @ 10V
Series: MDmesh™ K5
Rds On (Max) @ Id, Vgs: 180 mOhm @ 12A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Drain to Source Voltage (Vdss): 800V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube 
Description

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The STW30N80K5 is a powerful and highly efficient power MOSFET, also known as a metal–oxide–semiconductor field-effect transistor (MOSFET). It is produced by semiconductor company STMicroelectronics using their proprietary and advanced HEXFET® technology. The transistor is a type of semiconductor device which can be used to regulate current or voltage. It has a wide range of applications, including power switching and amplifying.

The STW30N80K5 is offered in a TO-247 package and has an 80A current rating at 25°C, a VDS (drain-source voltage) of 800V and an RDS (drain-source on-resistance) of 5.39mΩ at 100°C. It is designed to operate in a toggling mode and can operate efficiently at a temperature range of -55°C to 175°C. Its total power dissipation is around 20W, making it suitable for a wide range of applications. Its high current rating and low on-resistance make it ideal for applications that require regulated and precise current flow.

The STW30N80K5 works by using the basic principle of operation of a field-effect transistor, known as a metal–oxide–semiconductor field-effect transistor (MOSFET), which is a specific type of electrical switch. It is made up of four terminals: the gate, drain and source, as well as the body (or substrate). The gate terminal is used to control the current flow between the drain and source by applying a voltage to the gate. When a voltage is applied to the gate, it allows a conduction path to be created between the drain and the source, allowing current to pass through. When the voltage is removed, the conduction path is broken and no current can flow.

The STW30N80K5 has a variety of applications, such as in high-power power supplies, motor drives, electric vehicles and solar inverters. It can also be used in applications such as high-frequency switches, high-power audio amplifiers, UPS systems and lighting ballasts. The transistor is a powerful and efficient option for these kinds of applications, due to its high current rating and low on-resistance.

The STW30N80K5 MOSFET is an efficient and reliable power MOSFET which can be used in a wide range of applications. It has a high current rating, low on-resistance, wide temperature range and can operate in a toggling mode. With its flexibility and accuracy, it is the perfect solution for high-power applications.

The specific data is subject to PDF, and the above content is for reference

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