STW35N60M2-EP

MOSFET Basics

Before discussing the application field and working principle of the STW35N60M2-EP, let us first briefly discuss the basics of a MOSFET as a whole.

MOSFET stands for Metal-Oxide Semiconductor Field-Effect Transistor, and is a subcategory of FETs (Field-Effect Transistors). Like an ordinary transistor, a MOSFET consists of three terminals, namely a source, a drain and a gate, except the gate is insulated from the channel between the source and drain, hence giving it its name ”insulated-gate”.

A MOSFET is classified according to whether it is a single-sided or double-sided device, and also based on the number of channels it has (N-channel or P-channel). With double-sided devices, the two sides are completely isolated from each other and can be used independently, allowing for higher current capacity. As for the type of MOSFET, the STW35N60M2-EP is an insulated double-sided N-channel MOSFET.

Application Field

As mentioned earlier, the STW35N60M2-EP is a 600-amp fully insulated double-sided MOSFET, making it the perfect device for a variety of industrial applications. These applications include primary distribution networks, on-board converters, welding and heating systems, motor drives and more.

The STW35N60M2-EP is also suitable for various implementation scenarios, such as power-saving, motor bidding and more. Due to its impressive current capacity and low on-resistance, it is capable of smoothly driving large motors with minimal energy loss, while its insulated construction helps reduce the risk of leakage.

Working Principle

The STW35N60M2-EP is an insulated double-sided N-channel MOSFET, and operates on the same principle as a normal single-sided MOSFET. That is, its resistance is modulated by a voltage difference between its gate and source terminals.

When a positive voltage is applied to the gate, electrons will move from the source terminal to the gate, forming an "inversion layer" in the channel between the source and the drain. This inversion layer has a lower resistance than the channel, which decreases the total resistance between the source and drain. Conversely, when a negative voltage is applied, the inversion layer disappears and the device will go back to a nonconductive state.

In the case of the STW35N60M2-EP, the two sides are completely isolated and can be controlled independently. This allows for more complex control scenarios, such as parallel and serial operation.

Conclusion

The STW35N60M2-EP is a fully insulated double-sided MOSFET with a high current capacity of 600A, making it the perfect device for a variety of industrial applications. Thanks to its impressive current capacity and low on-resistance, it is capable of providing efficient power conversion and driving large motors with minimal energy loss. Its insulated construction also helps reduce the risk of leakage.