STW36NM60N

Vgs(th) (Max) @ Id:	4V @ 250µA
Package / Case:	TO-247-3
Supplier Device Package:	TO-247-3
Mounting Type:	Through Hole
Operating Temperature:	150°C (TJ)
Power Dissipation (Max):	210W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	2722pF @ 100V
Vgs (Max):	±25V
Gate Charge (Qg) (Max) @ Vgs:	83.6nC @ 10V
Series:	MDmesh™ II
Rds On (Max) @ Id, Vgs:	105 mOhm @ 14.5A, 10V
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	29A (Tc)
Drain to Source Voltage (Vdss):	600V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Obsolete
Packaging:	Tube

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STW36NM60N Application Field and Working PrincipleSTW36NM60N is a well-known single-N-channel silicon-carbide MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor). It has been designed specifically for high power switching applications. This MOSFET works in a discrete nature and is suitable for applications that require high performance and high voltage switching. The STW36NM60N device is a single transistor operating in a single-N-channel. It is based on the efficient structure of N-type MOSFETs and works in a low voltage space between 0-54V. Its gate threshold voltage is -4V and gate-drain threshold voltage is -2V. As this device is able to operate at relatively high voltages, it offers superior switching characteristics and superior heat dissipation, making it a reliable and efficient choice for high power switching. The STW36NM60N has several applications, including the use in motor drives, DC motor controllers, on/off power supply and security systems. It can be used in combination with IGBTs (Insulated Gate Bipolar Transistors) to drive large motors in high power applications. It can be used to implement motion control systems that operate at frequencies greater than 1000kHz. It can be used in the power conversion circuits found in Lithium-ion batteries, solar panels, and fuel cells. The working principle of the STW36NM60N is based on the concept of the Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET). This device operates in a single-N-channel and has three terminals, namely the gate (G), drain (D), and source (S). It captures an electric charge that is stored in the gate’s insulator. The semiconductor in the device builds up an electric field between the gate and drain or between the gate and source. This electric field can modulate the amount of current flowing between the terminals. When a potential difference is applied across the gate and source, charge is accumulated at the gate, and the voltage between the gate and drain can be modulated. This process is known as electrostatic induction. The STW36NM60N is a high voltage switch and its operation relies on the electric field that is created when a voltage is applied. When the voltage is high enough, the electric field will break down the dielectric material, allowing the current to flow through the device. This device is efficient and reliable, providing superior performance and high power switching capabilities. It is an excellent choice for applications that require high voltage switching and efficient heat dissipation.

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