| Allicdata Part #: | 497-11000-5-ND |
| Manufacturer Part#: |
STW35N65M5 |
| Price: | $ 6.87 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | STMicroelectronics |
| Short Description: | MOSFET N-CH 650V 27A TO-247 |
| More Detail: | N-Channel 650V 27A (Tc) 160W (Tc) Through Hole TO-... |
| DataSheet: |  STW35N65M5 Datasheet/PDF |
| Quantity: | 1083 |
| 1 +: | $ 6.86700 |
| 10 +: | $ 6.66099 |
| 100 +: | $ 6.52365 |
| 1000 +: | $ 6.38631 |
| 10000 +: | $ 6.18030 |
| Vgs(th) (Max) @ Id: | 5V @ 250µA |
| Package / Case: | TO-247-3 |
| Supplier Device Package: | TO-247-3 |
| Mounting Type: | Through Hole |
| Operating Temperature: | 150°C (TJ) |
| Power Dissipation (Max): | 160W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 3750pF @ 100V |
| Vgs (Max): | ±25V |
| Gate Charge (Qg) (Max) @ Vgs: | 83nC @ 10V |
| Series: | MDmesh™ V |
| Rds On (Max) @ Id, Vgs: | 98 mOhm @ 13.5A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Current - Continuous Drain (Id) @ 25°C: | 27A (Tc) |
| Drain to Source Voltage (Vdss): | 650V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Obsolete |
| Packaging: | Tube |
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STW35N65M5 is a popular N-channel MOSFET model. Primarily used in power management and switching applications, this single power MOSFETs is known for its impressive speed, low capacitance and low on-state resistance.
STW35N65M5 is a power MOSFET with a drain current of up to 65 A and an energy-efficient, high-frequency switching operation. It is primarily used in applications such as high-efficiency motor controls, DC-DC converters, and solar inverters.
The working principle of STW35N65M5 is based on the Metastable Quantum Well (QW) structure and advanced voltage-intensive Valley. This allows for fast switching performance to reduce power dissipation. The device has a low gate charge and switching thresholds, making it suitable for high-frequency applications as it can be integrated into newer clock and pulse-width modulation circuits.
The device’s low-capacitance design, low on-state resistance, and low gate charge makes it highly suitable for switch-mode power supplies (SMPS) and other power management applications that require high efficiency. Due to its low RDS(on), the device can reduce power dissipation and offer better performance than traditional MOSFETs.
The device is pin-compatible, making it an easy replacement for existing MOSFETs. The device also has a low gate resistance, which helps ensure fast switching and the lowest gate threshold voltage, enhancing the overall switch-mode power supply performance.
To summarise, STW35N65M5 is a N-channel MOSFET model,used in power management and switching applications. Its Metastable Quantum Well structure and advanced voltage-intensive Valley enables fast switching performance to reduce power dissipation and offer better performance than traditional MOSFETs. It is suitable for applications such as high-efficiency motor controls, DC-DC converters, and solar inverters and its low RDS(on) enables the device to reduce power dissipation. Furthermore, it is pin-compatible, making it an easy replacement for existing MOSFETs.
The specific data is subject to PDF, and the above content is for reference
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