Allicdata Part #: | TSM018NA03CRRLGTR-ND |
Manufacturer Part#: |
TSM018NA03CR RLG |
Price: | $ 0.44 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Taiwan Semiconductor Corporation |
Short Description: | MOSFET N-CH 30V 185A 8PDFN |
More Detail: | N-Channel 30V 185A (Tc) 104W (Tc) Surface Mount 8-... |
DataSheet: | TSM018NA03CR RLG Datasheet/PDF |
Quantity: | 2500 |
2500 +: | $ 0.40268 |
Vgs(th) (Max) @ Id: | 2.5V @ 250µA |
Package / Case: | 8-PowerTDFN |
Supplier Device Package: | 8-PDFN (5x6) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 104W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 3479pF @ 15V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 56nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 1.8 mOhm @ 29A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 185A (Tc) |
Drain to Source Voltage (Vdss): | 30V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The TSM018NA03CR RLG is a unique and versatile FET device that has become an increasingly popular choice among those looking for a reliable, efficient and robust solution for their applications. The RLG is a P-channel MOSFET, which stands for Metal-Oxide Semiconductor FET. The P-channel type of transistor allows for the efficient and effective transfer of electrons between anode and cathode.
The TSM018NA03CR RLG is widely used in many applications due to its low-power consumption, robust performance and reliability. It is widely used in high-speed switching applications, analog and digital circuit design, RF design, power management, motor control and lighting control. The device is also suitable for use in medical and automotive systems. The device can improve the performance of the systems, reduce power consumption and provide reliable performance.
The various advantages of using the TSM018NA03CR RLG are also quite beneficial for the various industrial sectors. The device is quite efficient and powerful and can be used in various industrial applications. For instance, the device can be used in applications such as electrical motor drives in HVAC, power conditioning circuits, anode-cathode switching systems, power converters, and solar control and power conversion. It is also suitable for use in the manufacturing industry, as it is highly robust and reliable.
The working principle behind the TSM018NA03CR RLG is best understood by considering the process of electron transfer between anode and cathode. The electrons (sports) move from the drain through the gate, between the two electrodes, then to the source. The electrons\' motion is regulated by the gate voltage, which can be changed in order to adjust the drain current. This means that the device can be used to control the current to flow in a different direction or at a different voltage than the gate voltage.
The device also has another very important feature which is the body diode. This diode allows the device to be used in a low-power application, as it maintains a low voltage on the drain when the gate is off. This can help reduce power losses from long conduction times. The body diode also helps in better heat dissipation as it prevents hot spots from occurring on the drain.
The various advantages of using the TSM018NA03CR RLG make it an ideal choice for applications requiring a reliable, efficient and robust solution. The device is versatile and able to be used in a range of applications, including industrial and medical, due to its low power consumption and robust performance. The device is also highly reliable and the body diode helps keep the voltage on the drain low, reducing power losses.
The specific data is subject to PDF, and the above content is for reference
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