TSM090N03CP ROG

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The TSM090N03CP is an ROG (Radio-Operated Gate) MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) from Toshiba Corporation,a global electronics and semiconductor company.This particular MOSFET, a single unit, can switch and adjust voltages to maintain low-level currents, thereby providing a very effective way to control circuits in small form factor power supplies or gate drive circuits for power devices.

Application field

The TSM090N03CP is used in several applications. It is ideal for small form factor power supplies and gate drive circuits for power devices, as well as for pulse width modulation applications. It has a low RDS (on) and a high-speed switching capability, making it ideal for high-power switch applications, where power needs up to 9.0A at 25V are required. It also performs well in lighting control applications, where pulse width modulation is used to regulate light output. This can include applications such as LED lighting controllers and general-purpose lighting applications.

Working Principle

MOSFETs work by using the conductive properties of certain materials, such as silicon, to form a channel for current to flow. The conducting channel is created by positive and negative charges, referred to as “holes” and “electrons,” respectively. When a gate voltage is applied, electrons are injected into the channel, enabling current to flow. The larger the gate voltage, the more electrons that are injected and the greater the current that can flow.

In the case of the TSM090N03CP, the applied gate voltage allows the MOSFET to act as a switch, allowing current to flow or not flow through it depending on the voltage applied. This makes the device ideal for applications in which small adjustments of current or voltage are needed, as the gate voltage can be easily adjusted to open or close the channel as needed.

The TSM090N03CP also has a low RDS (on) value, meaning that it requires less power to turn the device on and off. This results in a higher efficiency and lower power loss when compared to other, similar devices. This makes it ideal for high-power applications, such as LED lighting, where the amount of power being consumed needs to be minimized.

In addition, the device has a very high-speed switching time of less than 1ns. This is due to its low gate capacitance, allowing the device to rapidly switch on and off, making it suitable for applications that require high-speed operation.

Conclusion

The TSM090N03CP ROG MOSFET is an effective device for applications where small voltage or current adjustments are needed and power efficiency is of paramount importance. It has a low RDS (on) value, allowing it to be used in high-power applications, and a fast switching time of less than 1ns. It is therefore ideal for applications such as small form factor power supplies, gate drive circuits for power devices, and pulse width modulation.

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